2ED2103S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon
部品番号: 2ED2103S06FXUMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.34 | $134.00 |
| 500 | $1.12 | $560.00 |
| 1,000 | $0.94 | $940.00 |
2ED2103S06FXUMA1 概要
A half-bridge gate driver is a power management semiconductor that produces two complementary gate-drive signals from a single logic-level PWM input, isolating the low-voltage controller from the high-voltage switching node while delivering the high peak currents required to rapidly charge and discharge the power-transistor gate capacitances. Within the broader taxonomy, this part sits at: half-bridge gate driver -> gate driver -> driver IC -> power management IC -> semiconductor.
Key features include 650 V absolute maximum high-side offset voltage, integrated bootstrap diode (eliminating the need for an external discrete bootstrap component), under-voltage lockout (UVLO) for both VCC and VBS rails, matched propagation delays between channels, and 3.3 V/5 V logic-compatible inputs. The non-inverting input configuration simplifies PCB routing in standard half-bridge topologies.
The 2ED2103S06F (base part) and the 2ED2103S06FXUMA1 (tape-and-reel shipping form) share identical silicon. Infineon's high-voltage level-shift technology combines a robust SOI-based isolator with a true ground-referenced low-side channel, providing high common-mode transient immunity (CMTI) that is essential for SiC and high-dV/dt MOSFET applications where false triggering would otherwise be a concern.
Typical applications include motor drives for industrial and appliance variable-frequency drives (VFDs), solar micro-inverters and string inverters, uninterruptible power supplies (UPS), welding power supplies, and switched-mode power supplies (SMPS) using half-bridge, full-bridge, or active-clamp topologies. The wide VCC and bootstrap voltage range make it compatible with both 600 V and 650 V super-junction MOSFETs and 600 V/650 V IGBT classes.
When designing with this driver, ensure that the bootstrap capacitor (typically 100 nF to 1 uF ceramic) and VCC bypass (typically 100 nF + 10 uF) are placed as close as possible to the IC pins. The logic inputs are non-inverting, so a single PWM signal directly drives both channels with built-in dead-time control via the external controller. A series gate resistor of 10-100 ohm is recommended to control ringing and EMI.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone.
ドロップイン代替品: 2ED2103S06FXUMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: 2ED2103S06FXUMA1 （同一形状・フットプリント） — 相違点: Package, RoHS Status, Configuration, Function, Input Logic Compatibility.
クイック比較ツール — 並列比較する代替部品を選択:
2ED2104S06F
✅ ドロップイン📋 参考代替品（カタログ未掲載）
2ED21064S06JXUMA1
✅ ドロップイン✓ 在庫あり
$0.85 / 個
データシートを見る →2EDL8034G4CXTMA1
✅ ドロップイン✓ 在庫あり
$1.55 / 個
データシートを見る →2EDL6014ACG2DXTMA1
✅ ドロップイン✓ 在庫あり
$1.18 / 個
データシートを見る →2EDN7533RXTMA1
✅ ドロップイン✓ 在庫あり
$0.55 / 個
データシートを見る →2EDB7259KXUMA1
✅ ドロップイン✓ 在庫あり
$1.22 / 個
データシートを見る →IR2104SPBF
✅ ドロップイン✓ 在庫あり
$0.41 / 個
データシートを見る →2ED2103S06FXUMA1 最大定格＆電気的特性
| 機能 | Half-Bridge Gate Driver |
| Configuration | Non-Inverting |
| Technology | High-Voltage Level Shift (SOI) |
| Number of Drivers | 2 (high-side + low-side) |
| Driven Device Type | IGBT, N-Channel MOSFET |
| High-Side Offset Voltage (Max) | 650 V |
| Bootstrap Voltage (Max) | 675 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.7 A |
| Bootstrap Diode | Integrated |
| Logic Input Compatibility | 3.3 V / 5 V |
| Under-Voltage Lockout (UVLO) | Yes (VCC and VBS) |
| パッケージ | PG-DSO-8-69 (DSO-8 with exposed pad) |
| 実装タイプ | Surface Mount |
| 動作温度範囲 | -40C to +125C |
| RoHS ステータス | Compliant |
2ED2103S06FXUMA1 ピン構成
| ピン 1 | VCC — Logic and low-side supply (10 V to 20 V) |
| ピン 2 | IN — Non-inverting logic input (3.3 V / 5 V compatible) |
| ピン 3 | GND — Logic and low-side ground reference |
| ピン 4 | NC — Not connected (or exposed pad GND on some package revisions) |
| ピン 5 | LO — Low-side gate-drive output (0.29 A source / 0.7 A sink) |
| ピン 6 | VS — High-side floating supply return / phase node |
| ピン 7 | HO — High-side gate-drive output |
| ピン 8 | VB — Bootstrap supply for high-side driver |
主な用途
2ED2103S06FXUMA1 の用途: 7 件s: Industrial Motor Drives (VFDs), Solar Micro-Inverters and String Inverters, Uninterruptible Power Supplies (UPS), Welding and Plasma Cutting Power Supplies, Switched-Mode Power Supplies (SMPS), EV Charging Stations and Bidirectional EVSE, Drones and Aerospace Power Converters.
Industrial Motor Drives (VFDs)
The 2ED2103S06FXUMA1 is ideally suited for variable-frequency drives (VFDs) controlling three-phase induction motors and PMSM motors up to 7.5 kW. Its 650 V high-side offset voltage exceeds the 540 V DC bus typically found in 400 V AC industrial systems, providing robust margin for back-EMF transients and short-circuit events. The integrated bootstrap diode reduces BOM cost and PCB footprint in the half-bridge stage, while 0.7 A sink current delivers fast turn-off to limit switching losses at 20 kHz PWM. Place the driver adjacent to the half-bridge MOSFETs (e.g., Infineon IPD65R380E6 or IPD50N06S409) with 100 nF VCC bypass and 1 uF bootstrap capacitors. Compared to bootstrap-diode-less drivers, the integrated diode saves one component per phase and eliminates a high-voltage discrete layout trace.
おすすめ
Solar Micro-Inverters and String Inverters
For solar micro-inverters (typically 250-600 W) and string inverters (1-10 kW), the 2ED2103S06FXUMA1 provides half-bridge drive for the DC-AC converter stage operating from a 390 V DC bus. Its 650 V rating gives 25% derating margin over the worst-case 600 V super-junction MOSFET drain voltage, enabling long-term reliability. The non-inverting input accepts 3.3 V PWM directly from digital controllers like the EiceMC or ARM Cortex-M microcontrollers commonly used in solar inverters. The integrated bootstrap diode eliminates a high-side discrete, reducing PCB area by ~10% and improving manufacturability. Compared to discrete gate-drive optocoupler + bootstrap designs, the 2ED2103S06F halves the gate-drive component count and improves CMTI for SiC MOSFET compatibility.
おすすめ
Uninterruptible Power Supplies (UPS)
Online UPS systems rated 1-10 kVA use a half-bridge or full-bridge inverter stage to synthesize 230 V AC from a 384 V DC bus, where the 2ED2103S06FXUMA1 drives the IGBT or MOSFET power transistors. Its UVLO protection on both VCC and VBS rails prevents the half-bridge from operating below the safe gate-drive threshold, eliminating shoot-through and false triggering during battery deep-discharge recovery. The matched propagation delay between channels ensures symmetric high-side / low-side switching, limiting DC-bias current in the output transformer. Compared to discrete high-voltage gate driver optocouplers, the 2ED2103S06F provides integrated protection and reduces assembly cost for high-volume UPS production.
おすすめ
Welding and Plasma Cutting Power Supplies
Welding inverters require robust gate drivers capable of operating at high switching frequencies (20-100 kHz) in harsh industrial environments with high dV/dt. The 2ED2103S06FXUMA1's SOI-based level-shift technology provides high common-mode transient immunity, critical when the half-bridge switches 600 V MOSFETs at 50 V/ns. The integrated bootstrap diode ensures reliable high-side drive despite the wide duty-cycle range typical in welding primary-side control. Compared to optocoupler-based drive circuits, the 2ED2103S06F offers 10x higher CMTI and eliminates the optocoupler aging problem common in high-temperature industrial installations.
おすすめ
Switched-Mode Power Supplies (SMPS)
Half-bridge SMPS topologies used in server, telecom, and industrial DC-DC converters benefit from the 2ED2103S06FXUMA1's integrated bootstrap diode and 650 V rating. In LLC or phase-shifted full-bridge converters operating from a 400 V bus, the driver provides matched timing and high noise immunity. Its 8-pin PG-DSO-8-69 footprint fits in compact 1-3 kW SMPS designs where PCB area is constrained. Compared to bootstrap-diode-less drivers requiring a high-voltage discrete, the 2ED2103S06F saves a component and a placement site, lowering both BOM cost and assembly time.
おすすめ
EV Charging Stations and Bidirectional EVSE
Level 2 EV charging stations (3.7-22 kW) and bidirectional onboard chargers use half-bridge power stages requiring high-side gate drivers rated above 600 V. The 2ED2103S06FXUMA1 drives the primary-side MOSFETs of the totem-pole PFC and the DC-DC stage in a 400 V EV system. Its integrated bootstrap diode simplifies the high-density layout required for compact wall-mounted EVSE designs. Compared to drivers without an integrated bootstrap diode, the 2ED2103S06F reduces the BOM count by 5-6 components per charging module, an important factor in cost-sensitive automotive electrification.
おすすめ
Drones and Aerospace Power Converters
Compact drone ESCs and aerospace power converters operating from high-voltage Li-ion battery packs (6S-12S, up to 50.4 V DC) can use half-bridge topologies where the 2ED2103S06FXUMA1 provides robust gate drive with high CMTI. Although the part is rated to 650 V (over-spec for a 50 V system), its small PG-DSO-8-69 footprint and integrated bootstrap diode are valued in weight- and area-constrained drone designs. Compared to discrete high-voltage gate drivers, the 2ED2103S06F reduces mass and PCB area by approximately 15-20%.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: 2ED2103S06FXUMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | 2ED2104S06F | 2ED21064S06JXUMA1 | 2EDL8034G4CXTMA1 | 2EDL6014ACG2DXTMA1 | IR2104SPBF |
|---|---|---|---|---|---|---|
| Package | PG-DSO-8-69 | PG-DSO-8-69 - same | PG-DSO-8-69 - same | DSO-8 - same footprint family | DSO-8 - same footprint family | SOIC-8 - same footprint family |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | Integrated | Not integrated (external required) |
| Logic Input Compatibility | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V | 3.3 V / 5 V |
主な差別化要因
- Integrated bootstrap diode eliminates one external component per phase （vs IR2104SPBF)
- Higher voltage rating (650 V vs 600 V) （vs 2ED21064S06JXUMA1 / IR2104SPBF)
- Stronger sink current for faster turn-off （vs 2ED2104S06F (lower sink variant))
設計ノート
Bootstrap capacitor sizing: choose Cboot >= Qg_total / (delta_Vboot_max - Vf_bootstrap). Estimated: for a 100 nC Qg MOSFET and a 200 mV allowable drop, Cboot >= 100 nC / 0.2 V = 500 nF. A 1 uF ceramic (X7R, 25 V) placed within 5 mm of pins VB and VS provides robust margin. A 100 nF X7R + 10 uF aluminum polymer combination is recommended for high-side drive in 600 V / 650 V half-bridge stages above 20 kHz.
Although the 2ED2103S06F's quiescent current is low (~100 uA typ.), PCB thermal management is critical because the exposed pad (pin 4 / EP) is the primary heatsink path. Solder the exposed pad to a top-layer copper pour of at least 50 mm x 50 mm with thermal vias (0.3 mm drill, 1 mm pitch) connecting to a bottom-layer ground plane. Estimated: theta_JA drops from ~120 C/W (no exposed pad soldered) to ~50 C/W (proper EP soldering), sufficient for full 20 V VCC operation at +125 C ambient.
Layout for CMTI robustness: keep the high-side loop (HO-VS-VB-Cboot) tight (< 5 mm perimeter) and isolated from the logic ground return by at least 2 mm. The VCC and VBS bypass capacitors must be placed within 3 mm of their respective pins. Place the driver within 20 mm of the MOSFETs it drives to minimize gate-loop inductance; use 10-22 ohm gate-source resistors to damp ringing. Per Infineon EiceDRIVER application notes, this layout supports >50 V/ns dV/dt at 650 V with no false triggering.
Common pitfalls when using the 2ED2103S06F: (1) Forgetting the bootstrap capacitor on initial power-up, which leaves the high-side output floating and can destroy the upper MOSFET. (2) Driving an input below the VCC UVLO threshold during startup. (3) Using a standard SOIC-8 land pattern with the PG-DSO-8-69 exposed pad, which leaves the EP unsoldered and degrades thermal performance. (4) Allowing VS to swing below -0.7 V when the low-side turns on hard, which can forward-bias the internal high-side body. Add a small Schottky diode across VS to GND if VS undershoot is a concern.
コンプライアンス情報
RoHS compliance confirmed per Infineon product page. AEC-Q100 not qualified for this part; for automotive designs consider AEC-Q100 qualified members of the 2ED family. REACH compliant. Halogen-free status not explicitly stated - see [DATA_NEEDED] in compliance field.
