2EDL900G3XTMA1 vs 2EDL8034G4CXTMA1 比較
詳細な並列比較: 2EDL900G3XTMA1 メーカー: Infineon および 2EDL8034G4CXTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 2EDL900G3XTMA1 | 2EDL8034G4CXTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.20 | $1.55 |
| Product Type | Dual-channel level-shift gate driver IC | — |
| Topology Supported | Half-bridge, high-side, low-side | — |
| Isolation Type | Junction isolation (JI), 120 V | Junction-isolated (level-shifted) |
| Number of Channels | 2 (high-side + low-side) | — |
| Peak Source Current | 4 A | 3 A |
| Peak Sink Current | 6 A | 4 A |
| Drive Output Voltage Range | 4 V to 16 V | — |
| Supply Voltage (VDD/VBS) | 4 V to 16 V | — |
| Switching Device Supported | Si MOSFET, enhancement-mode GaN FET | — |
| Configurable Deadtime | Yes (programmable) | — |
| Integrated Current Sense Amplifier | Yes | — |
| PWM Modes | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted | — |
| Input Logic Compatibility | 3.3 V / 5 V / TTL (per datasheet) | 3.3 V / 5 V |
| パッケージ | TSNP-16 (3x3 mm) with exposed pad | PG-VDSON-10-2 (DSN-10) with exposed pad |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -40 C to +125 C | — |
| MSLレベル | 1 | [DATA_NEEDED: MSL level] |
| RoHS ステータス | Compliant | — |
| Driver Type | — | Half-Bridge (High-Side / Low-Side) |
| Configuration | — | Non-Inverting |
| Bootstrap Voltage (Max) | — | 120 V |
| 出力数 | — | 2 |
| Rise Time (Typical) | — | [DATA_NEEDED: rise time ns] |
| Fall Time (Typical) | — | [DATA_NEEDED: fall time ns] |
| Propagation Delay (Typical) | — | [DATA_NEEDED: propagation delay ns] |
| VCC Supply Voltage | — | [DATA_NEEDED: VCC range V] |
| UVLO Protection | — | Yes (VCC and VBS) |
| ESD Rating (HBM) | — | [DATA_NEEDED: ESD HBM kV] |
| 動作接合温度 | — | -40 C to +125 C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |