2EDL900G3XTMA1 vs 2EDL8034G4CXTMA1 对比
详细并排对比 2EDL900G3XTMA1 出自 Infineon 和 2EDL8034G4CXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 2EDL900G3XTMA1 | 2EDL8034G4CXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.20 | $1.55 |
| Product Type | Dual-channel level-shift gate driver IC | — |
| Topology Supported | Half-bridge, high-side, low-side | — |
| Isolation Type | Junction isolation (JI), 120 V | Junction-isolated (level-shifted) |
| Number of Channels | 2 (high-side + low-side) | — |
| Peak Source Current | 4 A | 3 A |
| Peak Sink Current | 6 A | 4 A |
| Drive Output Voltage Range | 4 V to 16 V | — |
| Supply Voltage (VDD/VBS) | 4 V to 16 V | — |
| Switching Device Supported | Si MOSFET, enhancement-mode GaN FET | — |
| Configurable Deadtime | Yes (programmable) | — |
| Integrated Current Sense Amplifier | Yes | — |
| PWM Modes | Tri-state, HSCC HS, HSCC LS, Hi/Li, Hi/Li inverted | — |
| Input Logic Compatibility | 3.3 V / 5 V / TTL (per datasheet) | 3.3 V / 5 V |
| 封装 | TSNP-16 (3x3 mm) with exposed pad | PG-VDSON-10-2 (DSN-10) with exposed pad |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -40 C to +125 C | — |
| MSL 等级 | 1 | [DATA_NEEDED: MSL level] |
| RoHS 状态 | Compliant | — |
| Driver Type | — | Half-Bridge (High-Side / Low-Side) |
| Configuration | — | Non-Inverting |
| Bootstrap Voltage (Max) | — | 120 V |
| 输出数量 | — | 2 |
| Rise Time (Typical) | — | [DATA_NEEDED: rise time ns] |
| Fall Time (Typical) | — | [DATA_NEEDED: fall time ns] |
| Propagation Delay (Typical) | — | [DATA_NEEDED: propagation delay ns] |
| VCC Supply Voltage | — | [DATA_NEEDED: VCC range V] |
| UVLO Protection | — | Yes (VCC and VBS) |
| ESD Rating (HBM) | — | [DATA_NEEDED: ESD HBM kV] |
| 工作结温 | — | -40 C to +125 C |
| Lead-Free / RoHS | — | Yes (per Infineon product page) |