BFU520W vs BFU520WF 比較

詳細な並列比較: BFU520W メーカー: NXP Semiconductors および BFU520WF メーカー: NXP Semiconductors。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

NXP Semiconductors
BFU520W BFU520W - NPN 2GHz Low Noise RF Transistor | NXP

BFU520W - NPN 2GHz Low Noise RF Transistor | NXP

BFU520W ✓ 生産中
NXP Semiconductors
BFU520WF BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF - NPN RF Transistor 12V 11GHz SOT323 | NXP

BFU520WF ✓ 生産中

仕様比較

パラメータ BFU520W BFU520WF
ブランド NXP Semiconductors NXP Semiconductors
カテゴリ Transistors Transistors
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.08 $0.22
Polarity NPN NPN
Technology Silicon wideband RF BJT Wideband silicon RF BJT, 11 GHz fT silicon technology
Application Frequency Range Up to 2 GHz Up to 2 GHz
パッケージ SOT323 (3-pin plastic) SOT323 (SC-70), 3-pin plastic
実装タイプ Surface Mount Surface Mount
AEC-Q101 Qualified —
Product Family NXP BFU5 family —
Primary Use Case High speed, low noise small-signal to medium power RF applications —
コレクタ-エミッタ間電圧(Vceo) [DATA_NEEDED: VCEO] —
コレクタ-ベース間電圧(Vcbo) [DATA_NEEDED: VCBO] —
Continuous Collector Current (IC) [DATA_NEEDED: IC] —
Total Power Dissipation (Ptot) [DATA_NEEDED: Ptot] 450 mW
遷移周波数(ft) [DATA_NEEDED: fT] —
Noise Figure (NF) [DATA_NEEDED: NF] —
DC Current Gain (hFE) [DATA_NEEDED: hFE] [DATA_NEEDED: hFE]
動作温度範囲 [DATA_NEEDED: TJ range] [DATA_NEEDED: operating temperature range]
Collector-Emitter Breakdown Voltage (VCEO) — 12 V
Collector-Emitter Voltage (VCEO rating) — 12 V
Maximum Collector Current (IC max) — 30 mA
Transit Frequency (fT) — 11 GHz
Minimum Noise Figure (NFmin) — 0.6 dB at 900 MHz
Maximum Stable Gain (MSG) — 18.5 dB at 900 MHz
Qualification — AEC-Q101 qualified
RoHS ステータス — Compliant
Family — BFU5 family, small signal to medium power up to 2 GHz
Collector-Base Capacitance (Ccb) — [DATA_NEEDED: Ccb]

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