BFU520W vs BFU520WF 对比
详细并排对比 BFU520W 出自 NXP Semiconductors 和 BFU520WF 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BFU520W | BFU520WF |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 分类 | Transistors | Transistors |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.08 | $0.22 |
| Polarity | NPN | NPN |
| Technology | Silicon wideband RF BJT | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Application Frequency Range | Up to 2 GHz | Up to 2 GHz |
| 封装 | SOT323 (3-pin plastic) | SOT323 (SC-70), 3-pin plastic |
| 安装类型 | Surface Mount | Surface Mount |
| AEC-Q101 | Qualified | — |
| Product Family | NXP BFU5 family | — |
| Primary Use Case | High speed, low noise small-signal to medium power RF applications | — |
| 集电极-发射极电压（Vceo） | [DATA_NEEDED: VCEO] | — |
| 集电极-基极电压（Vcbo） | [DATA_NEEDED: VCBO] | — |
| Continuous Collector Current (IC) | [DATA_NEEDED: IC] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot] | 450 mW |
| 过渡频率（ft） | [DATA_NEEDED: fT] | — |
| Noise Figure (NF) | [DATA_NEEDED: NF] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | [DATA_NEEDED: hFE] |
| 工作温度范围 | [DATA_NEEDED: TJ range] | [DATA_NEEDED: operating temperature range] |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Collector-Emitter Voltage (VCEO rating) | — | 12 V |
| Maximum Collector Current (IC max) | — | 30 mA |
| Transit Frequency (fT) | — | 11 GHz |
| Minimum Noise Figure (NFmin) | — | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | — | 18.5 dB at 900 MHz |
| Qualification | — | AEC-Q101 qualified |
| RoHS 状态 | — | Compliant |
| Family | — | BFU5 family, small signal to medium power up to 2 GHz |
| Collector-Base Capacitance (Ccb) | — | [DATA_NEEDED: Ccb] |