BFU520W vs BFU520WF 비교
다음의 상세 나란히 비교: BFU520W 제조: NXP Semiconductors 및 BFU520WF 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | BFU520W | BFU520WF |
|---|---|---|
| 브랜드 | NXP Semiconductors | NXP Semiconductors |
| 카테고리 | Transistors | Transistors |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.08 | $0.22 |
| Polarity | NPN | NPN |
| Technology | Silicon wideband RF BJT | Wideband silicon RF BJT, 11 GHz fT silicon technology |
| Application Frequency Range | Up to 2 GHz | Up to 2 GHz |
| 패키지 | SOT323 (3-pin plastic) | SOT323 (SC-70), 3-pin plastic |
| 실장 유형 | Surface Mount | Surface Mount |
| AEC-Q101 | Qualified | — |
| Product Family | NXP BFU5 family | — |
| Primary Use Case | High speed, low noise small-signal to medium power RF applications | — |
| 컬렉터-이미터 전압 (Vceo) | [DATA_NEEDED: VCEO] | — |
| 컬렉터-베이스 전압 (Vcbo) | [DATA_NEEDED: VCBO] | — |
| Continuous Collector Current (IC) | [DATA_NEEDED: IC] | — |
| Total Power Dissipation (Ptot) | [DATA_NEEDED: Ptot] | 450 mW |
| 전이 주파수 (ft) | [DATA_NEEDED: fT] | — |
| Noise Figure (NF) | [DATA_NEEDED: NF] | — |
| DC Current Gain (hFE) | [DATA_NEEDED: hFE] | [DATA_NEEDED: hFE] |
| 동작 온도 범위 | [DATA_NEEDED: TJ range] | [DATA_NEEDED: operating temperature range] |
| Collector-Emitter Breakdown Voltage (VCEO) | — | 12 V |
| Collector-Emitter Voltage (VCEO rating) | — | 12 V |
| Maximum Collector Current (IC max) | — | 30 mA |
| Transit Frequency (fT) | — | 11 GHz |
| Minimum Noise Figure (NFmin) | — | 0.6 dB at 900 MHz |
| Maximum Stable Gain (MSG) | — | 18.5 dB at 900 MHz |
| Qualification | — | AEC-Q101 qualified |
| RoHS 상태 | — | Compliant |
| Family | — | BFU5 family, small signal to medium power up to 2 GHz |
| Collector-Base Capacitance (Ccb) | — | [DATA_NEEDED: Ccb] |