BSC0501NSIATMA1 vs BSO220N03MDGXUMA1 比較
詳細な並列比較: BSC0501NSIATMA1 メーカー: Infineon および BSO220N03MDGXUMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC0501NSIATMA1 | BSO220N03MDGXUMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $0.24 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 50 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 動作接合温度 | -55C to +150C | — |
| パッケージ | PG-TDSON-8-6 (SuperSO8) | PG-DSO-8 (SO-8 with exposed pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS ステータス | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Technology | Trench-gate OptiMOS 5 | OptiMOS™ 3M (Trench MOSFET) |
| Series | — | OptiMOS™ 3M |
| Configuration | — | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) | — | 7.7 A |
| On-State Resistance (R_DS(on)) | — | 22 mΩ max @ V_GS=10V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G nC] |
| Power Dissipation (P_D) | — | 1.4 W |
| 動作温度範囲 | — | -55C to +150C (junction) |