BSC0501NSIATMA1 vs BSO220N03MDGXUMA1 Сравнение
Подробное сравнение бок о бок BSC0501NSIATMA1 от Infineon и BSO220N03MDGXUMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSC0501NSIATMA1 | BSO220N03MDGXUMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,65 | $0,24 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at Ta | 29 A | — |
| Continuous Drain Current (ID) at Tc | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation at Ta (PD) | 2.5 W | — |
| Power Dissipation at Tc (PD) | 50 W | — |
| Gate-Source Voltage (VGS) | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Рабочая температура перехода | -55C to +150C | — |
| Корпус | PG-TDSON-8-6 (SuperSO8) | PG-DSO-8 (SO-8 with exposed pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| Статус RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Technology | Trench-gate OptiMOS 5 | OptiMOS™ 3M (Trench MOSFET) |
| Series | — | OptiMOS™ 3M |
| Configuration | — | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | — | 30 V |
| Continuous Drain Current (I_D) | — | 7.7 A |
| On-State Resistance (R_DS(on)) | — | 22 mΩ max @ V_GS=10V |
| Gate-Source Voltage (V_GS) | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G nC] |
| Power Dissipation (P_D) | — | 1.4 W |
| Диапазон рабочих температур | — | -55C to +150C (junction) |