BSC0501NSIATMA1 vs BSO220N03MDGXUMA1 Comparison
Detailed side-by-side comparison of BSC0501NSIATMA1 by Infineon and BSO220N03MDGXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC0501NSIATMA1
BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
BSC0501NSIATMA1 β Active
Specification Comparison
| Parameter | BSC0501NSIATMA1 | BSO220N03MDGXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.65 | $0.24 |
| Manufacturer | Infineon | Infineon Technologies |
| Product Family | OptiMOS 5 25V/30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID) at Ta | 29 A | β |
| Continuous Drain Current (ID) at Tc | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Power Dissipation at Ta (PD) | 2.5 W | β |
| Power Dissipation at Tc (PD) | 50 W | β |
| Gate-Source Voltage (VGS) | Β±20 V | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| On-Resistance (RDS(on)) | [DATA_NEEDED: RDS(on) max at 10V VGS] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Operating Junction Temperature | -55C to +150C | β |
| Package | PG-TDSON-8-6 (SuperSO8) | PG-DSO-8 (SO-8 with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 (unlimited) |
| RoHS Status | Compliant | Compliant |
| Avalanche Rated | Yes | Yes |
| Technology | Trench-gate OptiMOS 5 | OptiMOSβ’ 3M (Trench MOSFET) |
| Series | β | OptiMOSβ’ 3M |
| Configuration | β | Dual N-Channel (2N-CH), independent |
| Drain-Source Voltage (V_DS) | β | 30 V |
| Continuous Drain Current (I_D) | β | 7.7 A |
| On-State Resistance (R_DS(on)) | β | 22 mΞ© max @ V_GS=10V |
| Gate-Source Voltage (V_GS) | β | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | β | [DATA_NEEDED: Q_G nC] |
| Power Dissipation (P_D) | β | 1.4 W |
| Operating Temperature Range | β | -55C to +150C (junction) |