BSC0504NSIATMA1 vs IAUC120N06S5L032ATMA1 比較
詳細な並列比較: BSC0504NSIATMA1 メーカー: Infineon および IAUC120N06S5L032ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC0504NSIATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $0.82 |
| トランジスタタイプ | N-channel MOSFET | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| パッケージ | PG-TDSON-8-6 | PG-TDSON-8-34 (5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| ゲートしきい値電圧 | [DATA_NEEDED: gate threshold voltage] | — |
| 熱抵抗 | [DATA_NEEDED: thermal resistance] | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (T_j) |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| RoHS ステータス | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| Technology | — | OptiMOS 5 Trench |
| AEC-Q101 Qualified | — | Yes |
| MSLレベル | — | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |