BSC0504NSIATMA1 vs IAUC120N06S5L032ATMA1 对比
详细并排对比 BSC0504NSIATMA1 出自 Infineon 和 IAUC120N06S5L032ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC0504NSIATMA1 | IAUC120N06S5L032ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.82 |
| 晶体管类型 | N-channel MOSFET | N-Channel, Enhancement Mode |
| Drain-to-Source Voltage | 30 V | — |
| Continuous Drain Current at Ta | 21 A | — |
| Continuous Drain Current at Tc | 72 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 30 W | — |
| Technology Family | OptiMOS 5 | — |
| 封装 | PG-TDSON-8-6 | PG-TDSON-8-34 (5x6 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 引脚数 | 8 pins | — |
| Exposed Pad | Yes, according to distributor package description | — |
| On-State Resistance | [DATA_NEEDED: on-state resistance] | — |
| Gate Charge | [DATA_NEEDED: gate charge] | — |
| 栅极阈值电压 | [DATA_NEEDED: gate threshold voltage] | — |
| 热阻 | [DATA_NEEDED: thermal resistance] | — |
| 工作温度范围 | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (T_j) |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification] | — |
| RoHS 状态 | unknown | Compliant |
| Lead-Free Status | unknown | — |
| Halogen-Free Status | unknown | — |
| REACH Status | unknown | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 5 (60 V) |
| Drain-to-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D, T_j) | — | 120 A |
| R_DS(on) Max (V_GS = 10 V) | — | 3.2 mOhm |
| Power Dissipation (P_D, T_C = 25 C) | — | 94 W |
| Technology | — | OptiMOS 5 Trench |
| AEC-Q101 Qualified | — | Yes |
| MSL 等级 | — | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage V_GS(th) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge Q_G | — | [DATA_NEEDED: Q_G total at V_GS=10V] |