BSC0902NSIATMA1 vs BSC019N04NSGATMA1 比較
詳細な並列比較: BSC0902NSIATMA1 メーカー: Infineon および BSC019N04NSGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC0902NSIATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.32 | $0.58 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 30V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TA=25C | 23 A | 30 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | — |
| Gate Charge QG(0V..10V) | 24 nC | — |
| Output Charge QOSS | 17 nC | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 48 W | — |
| 動作温度範囲 | -55C to +150C (junction) | -55C to +150C |
| パッケージ | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-1 (TDSON-8 FL) |
| 実装タイプ | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| ハロゲンフリー | Yes | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Technology | — | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | — | 40 V |
| RDS(on) max at VGS=10V | — | 2.5 mΩ |
| RDS(on) typ at VGS=10V | — | 1.9 mΩ |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Power Dissipation (PD) at TC=25C | — | 125 W |