BSC0902NSIATMA1 vs BSC019N04NSGATMA1 对比
详细并排对比 BSC0902NSIATMA1 出自 Infineon 和 BSC019N04NSGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSC0902NSIATMA1 | BSC019N04NSGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.32 | $0.58 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 30V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) Max | 30 V | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TA=25C | 23 A | 30 A |
| Continuous Drain Current (ID) at TC=25C | 100 A | 100 A |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance RDS(on) Max at VGS=10V | 2.8 mOhm | — |
| Gate Charge QG(0V..10V) | 24 nC | — |
| Output Charge QOSS | 17 nC | — |
| Power Dissipation (TA) | 2.5 W | — |
| Power Dissipation (TC) | 48 W | — |
| 工作温度范围 | -55C to +150C (junction) | -55C to +150C |
| 封装 | PG-TDSON-8-6 (TDSON-8) | PG-TDSON-8-1 (TDSON-8 FL) |
| 安装类型 | Surface Mount | Surface Mount |
| Built-in Diode | Yes (single with built-in diode) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| RoHS 状态 | Compliant | Compliant |
| Lead-Free | Yes | — |
| 无卤 | Yes | — |
| 晶体管类型 | — | N-Channel MOSFET |
| Technology | — | OptiMOS (trench) |
| Drain-Source Voltage (VDS) | — | 40 V |
| RDS(on) max at VGS=10V | — | 2.5 mΩ |
| RDS(on) typ at VGS=10V | — | 1.9 mΩ |
| Gate-Source Threshold (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TA=25C | — | 2.5 W |
| Power Dissipation (PD) at TC=25C | — | 125 W |