BSC097N06NSATMA1 vs BSC070N10NS5ATMA1 比較
詳細な並列比較: BSC097N06NSATMA1 メーカー: Infineon および BSC070N10NS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSC097N06NSATMA1 | BSC070N10NS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.38 | $0.68 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Part Status | Active | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) at Tc=25C | 46 A | — |
| Continuous Drain Current (ID) at Ta=25C | [DATA_NEEDED: ID at Ta=25C PCB-mounted] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM peak value] | — |
| RDS(on) max at VGS=10 V | 9.7 mOhm | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical value] | — |
| Gate Charge (Qg typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 36 W | — |
| 動作接合温度 | -55C to +150C | — |
| パッケージ / ケース | PG-TDSON-8-6 (SuperSO8 5x6 mm) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (N-channel trench) |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 (Unlimited) | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | Yes (EAS per datasheet) | — |
| Drain-Source Voltage (VDS) max | — | 100 V |
| Continuous Drain Current (ID) at TC=25C | — | 80 A |
| RDS(on) max @ VGS=10V | — | 7 mOhm |
| Gate-Source Voltage (VGS) max | — | 20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissition at TC=25C (Ptot) | — | 83 W |
| Power Dissipation at TA=25C | — | 2.5 W |
| 動作接合温度範囲 | — | -55 C to +150 C |
| パッケージ | — | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| Lead-Free | — | Yes |
| Typical Application | — | Synchronous rectification in SMPS |