BSC100N10NSFGATMA1 vs BSC118N10NSGATMA1 比較
詳細な並列比較: BSC100N10NSFGATMA1 メーカー: Infineon および BSC118N10NSGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
BSC100N10NSFGATMA1 - 100V OptiMOS N-Channel MOSFET, 10mΩ | Infineon
BSC100N10NSFGATMA1 ✓ 生産中仕様比較
| パラメータ | BSC100N10NSFGATMA1 | BSC118N10NSGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.49 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS | — |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | Trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID), Ta | 11.4 A | — |
| Continuous Drain Current (ID), Tc | 90 A | — |
| Power Dissipation (PD), Tc | 156 W | — |
| Drain-Source On-Resistance (RDS(on)) max | 10 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| パッケージ | PG-TDSON-8-1 (SuperSO8 5x6) | PG-TDSON-8-1 (TDSON EP, 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +150C (junction) | — |
| Gate Drive Voltage (recommended) | 10 V (for rated RDS(on)) | — |
| RoHS ステータス | Compliant | Compliant |
| Product Family | — | OptiMOS 2 |
| Mode | — | Enhancement (Normal Level) |
| Continuous Drain Current (ID) at Ta=25C | — | 11 A |
| Continuous Drain Current (ID) at Tc=25C | — | 71 A |
| Power Dissipation (PD) at Tc=25C | — | 114 W |
| 動作接合温度 | — | -55 C to +150 C |
| Lead Plating | — | Pb-free |
| ハロゲンフリー | — | Yes |
| JEDEC Qualification | — | Qualified per target application |
| Target Application | — | High-frequency SMPS, synchronous rectification |
| Gate Charge x RDS(on) FOM | — | Excellent (per datasheet) |