BSC100N10NSFGATMA1 vs BSC118N10NSGATMA1 Comparison

Detailed side-by-side comparison of BSC100N10NSFGATMA1 by Infineon and BSC118N10NSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSC100N10NSFGATMA1 BSC118N10NSGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS —
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) Trench MOSFET
Drain-Source Voltage (VDS) 100 V 100 V
Continuous Drain Current (ID), Ta 11.4 A —
Continuous Drain Current (ID), Tc 90 A —
Power Dissipation (PD), Tc 156 W —
Drain-Source On-Resistance (RDS(on)) max 10 mΩ —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Package PG-TDSON-8-1 (SuperSO8 5x6) PG-TDSON-8-1 (TDSON EP, 5x6 mm)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (junction) —
Gate Drive Voltage (recommended) 10 V (for rated RDS(on)) —
RoHS Status Compliant Compliant
Product Family — OptiMOS 2
Mode — Enhancement (Normal Level)
Continuous Drain Current (ID) at Ta=25C — 11 A
Continuous Drain Current (ID) at Tc=25C — 71 A
Power Dissipation (PD) at Tc=25C — 114 W
Operating Junction Temperature — -55 C to +150 C
Lead Plating — Pb-free
Halogen Free — Yes
JEDEC Qualification — Qualified per target application
Target Application — High-frequency SMPS, synchronous rectification
Gate Charge x RDS(on) FOM — Excellent (per datasheet)

Datasheets & Resources

Browse All Products Create BOM Request Quote