BSF134N10NJ3GXUMA1 vs AIMBG120R010M1XTMA1 比較
詳細な並列比較: BSF134N10NJ3GXUMA1 メーカー: Infineon および AIMBG120R010M1XTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSF134N10NJ3GXUMA1 | AIMBG120R010M1XTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $41.90 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 100 V | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 1200 V |
| Continuous Drain Current (ID) at TA=25°C | 9 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| Power Dissipation (PD) at TA=25°C | 2.2 W | — |
| Power Dissipation (PD) at TC=25°C | 43 W | — |
| パッケージ | MG-WDSON-2 (CanPAK M) | PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single with built-in diode | — |
| Terminal Position | Bottom | — |
| Terminal Finish | Silver Nickel | — |
| 動作温度範囲 | -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level per JEDEC J-STD-020] |
| Technology | Trench-gate OptiMOS planar | Silicon Carbide (SiC) Trench MOSFET |
| Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max value] | — |
| Body Diode Reverse Recovery | [DATA_NEEDED: trr value] | — |
| Product Family | — | CoolSiC™ G1 Automotive SiC Trench MOSFET |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID, Tc) | — | 205 A |
| On-Resistance RDS(on), typ | — | 8.7 mΩ |
| Power Dissipation (PD, Tc) | — | 882 W |
| 動作接合温度 | — | -55°C to +175°C |
| Automotive Qualification | — | AEC-Q101 |
| ピン数 | — | 7 + Tab |
| Lead-Free | — | Yes |