BSF134N10NJ3GXUMA1 vs AIMBG120R010M1XTMA1 Comparison

Detailed side-by-side comparison of BSF134N10NJ3GXUMA1 by Infineon and AIMBG120R010M1XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
AIMBG120R010M1XTMA1 AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 - 1200V 205A 8.7mΩ SiC MOSFET | Infineon

AIMBG120R010M1XTMA1 ✓ Active

Specification Comparison

Parameter BSF134N10NJ3GXUMA1 AIMBG120R010M1XTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 100 V —
FET Type N-Channel —
Drain-Source Voltage (VDS) 100 V 1200 V
Continuous Drain Current (ID) at TA=25°C 9 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
Power Dissipation (PD) at TA=25°C 2.2 W —
Power Dissipation (PD) at TC=25°C 43 W —
Package MG-WDSON-2 (CanPAK M) PG-TO263-7 (TO-263-7 / D2PAK-7) surface mount
Mounting Type Surface Mount Surface Mount
Configuration Single with built-in diode —
Terminal Position Bottom —
Terminal Finish Silver Nickel —
Operating Temperature Range -55°C to +150°C (TJ max) [DATA_NEEDED: exact Min/Max from datasheet] —
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL level per JEDEC J-STD-020]
Technology Trench-gate OptiMOS planar Silicon Carbide (SiC) Trench MOSFET
Gate Charge (Qg) [DATA_NEEDED: Qg value] —
RDS(on) at VGS=10V [DATA_NEEDED: RDS(on) max value] —
Body Diode Reverse Recovery [DATA_NEEDED: trr value] —
Product Family — CoolSiC™ G1 Automotive SiC Trench MOSFET
Channel Type — N-Channel
Continuous Drain Current (ID, Tc) — 205 A
On-Resistance RDS(on), typ — 8.7 mΩ
Power Dissipation (PD, Tc) — 882 W
Operating Junction Temperature — -55°C to +175°C
Automotive Qualification — AEC-Q101
Pin Count — 7 + Tab
Lead-Free — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote