BSZ065N03LSATMA1 vs BSZ070N08LS5ATMA1 比較
詳細な並列比較: BSZ065N03LSATMA1 メーカー: Infineon および BSZ070N08LS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSZ065N03LSATMA1 | BSZ070N08LS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.38 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| パッケージ / ケース | PG-TSDSON-8-FL (S308) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | — |
| 動作温度範囲 | -55C to +150C (junction) | — |
| MSLレベル | 1 | 1 (per JEDEC J-STD-020, unleaded reflow) |
| RoHS ステータス | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| Part Family | — | OptiMOS™ 5 (80 V logic-level) |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Continuous Drain Current (ID) at TC | — | 74 A (Tc, per datasheet) |
| Continuous Drain Current (ID) at TA / Si | — | [DATA_NEEDED: TA-rated ID] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulsed] |
| On-Resistance RDS(on) max @ VGS=10 V | — | 7 mΩ |
| On-Resistance RDS(on) @ VGS=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Gate Threshold Voltage VGS(th) | — | Logic-level (drive compatible with 4.5 V) |
| Total Gate Charge Qg | — | [DATA_NEEDED: total Qg] |
| Power Dissition PD max at TC | — | 69 W |
| 動作接合温度 | — | -55 °C to +150 °C |
| パッケージ | — | PG-TSDSON-8-FL (PQFN 3.3 x 3.3 mm) Surface Mount |
| Avalanche Rated | — | Yes |
| Reel Quantity | — | 5000 per 13-inch reel (T&R) |