EPF10K250EBI600-3 vs EPF10K250EBC600-1 比較
詳細な並列比較: EPF10K250EBI600-3 メーカー: Intel および EPF10K250EBC600-1 メーカー: Intel。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | EPF10K250EBI600-3 | EPF10K250EBC600-1 |
|---|---|---|
| ブランド | Intel | Intel |
| カテゴリ | FPGA & CPLD | FPGA & CPLD |
| ライフサイクル状態 | ラストバイ | Obsolete |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $110.00 | $155.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | 12,160 |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | — |
| Dedicated Inputs | 4 | — |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| パッケージ | 600-ball BGA (HBGA) | 600-BGA FineLine BGA |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | 5.0 V |
| 動作温度 | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | 0°C to +70°C (Commercial) |
| Speed Grade | -3 (fastest) | -1 |
| Process Technology | 0.22 µm CMOS, 4-layer metal | 0.22 µm SRAM |
| Configuration Method | SRAM, requires external configuration device (EPC series) | JTAG / ByteBlaster / EPC-series PROM |
| 実装タイプ | Surface Mount | — |
| RoHS ステータス | Not specified (SnPb / tin-lead finish per legacy distributor listing) | [DATA_NEEDED: RoHS status] |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| Manufacturer | — | Intel / Altera |
| Typical Gates | — | 250,000 |
| Usable Gates | — | 110,000 |
| Embedded Array Blocks (EABs) | — | 6 |
| Maximum RAM Bits | — | 40,960 |
| Number of PLLs | — | 6 |
| Programmable I/O Voltage | — | 3.3 V / 5.0 V (MultiVolt I/O) |