EPF10K250EBI600-3 vs EPF10K250EBC600-1 对比
详细并排对比 EPF10K250EBI600-3 出自 Intel 和 EPF10K250EBC600-1 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | EPF10K250EBI600-3 | EPF10K250EBC600-1 |
|---|---|---|
| 品牌 | Intel | Intel |
| 分类 | FPGA & CPLD | FPGA & CPLD |
| 生命周期状态 | 最后采购期 | Obsolete |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $110.00 | $155.00 |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 | 12,160 |
| Typical Gate Count | 250,000 system gates | — |
| Embedded System Blocks (ESBs) | 12 | — |
| Maximum User I/O | 470 | — |
| Dedicated Inputs | 4 | — |
| PLLs | 4 | — |
| On-chip RAM | Up to 40 Kbits | — |
| 封装 | 600-ball BGA (HBGA) | 600-BGA FineLine BGA |
| Ball Pitch | 1.93 mm | — |
| Core Voltage | 2.3 V (FLEX 10KE standard) [DATA_NEEDED: confirm exact VCCINT] | 5.0 V |
| 工作温度 | Industrial, 0C to +85C [DATA_NEEDED: confirm -40C to +85C range] | 0°C to +70°C (Commercial) |
| Speed Grade | -3 (fastest) | -1 |
| Process Technology | 0.22 µm CMOS, 4-layer metal | 0.22 µm SRAM |
| Configuration Method | SRAM, requires external configuration device (EPC series) | JTAG / ByteBlaster / EPC-series PROM |
| 安装类型 | Surface Mount | — |
| RoHS 状态 | Not specified (SnPb / tin-lead finish per legacy distributor listing) | [DATA_NEEDED: RoHS status] |
| Lead-free | no (legacy tin-lead per distributor description) | — |
| Manufacturer | — | Intel / Altera |
| Typical Gates | — | 250,000 |
| Usable Gates | — | 110,000 |
| Embedded Array Blocks (EABs) | — | 6 |
| Maximum RAM Bits | — | 40,960 |
| Number of PLLs | — | 6 |
| Programmable I/O Voltage | — | 3.3 V / 5.0 V (MultiVolt I/O) |