IAUCN04S7N027GATMA1 vs IAUCN04S7L050HATMA1 比較
詳細な並列比較: IAUCN04S7N027GATMA1 メーカー: Infineon および IAUCN04S7L050HATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN04S7N027GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.72 | $0.83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| パッケージ / ケース | PG-THSOG-4-1 (SSO4G 5x6) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| 動作温度範囲 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL] | 1 (per JEDEC J-STD-020) |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| 動作接合温度 | — | -55 °C to +175 °C |
| パッケージ | — | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |