IAUCN04S7N027GATMA1 vs IAUCN04S7L050HATMA1 Сравнение
Подробное сравнение бок о бок IAUCN04S7N027GATMA1 от Infineon и IAUCN04S7L050HATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 ✓ АктивенInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN04S7N027GATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,72 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| Корпус / Типоразмер | PG-THSOG-4-1 (SSO4G 5x6) | — |
| Тип монтажа | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | [DATA_NEEDED: total gate charge] |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL] | 1 (per JEDEC J-STD-020) |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | — | 5.04 mΩ |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Рабочая температура перехода | — | -55 °C to +175 °C |
| Корпус | — | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Automotive Qualification | — | AEC-Q101 (family-level, automotive grade) |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |