IAUCN04S7N037GATMA1 vs IAUCN04S7N015GATMA1 比較
詳細な並列比較: IAUCN04S7N037GATMA1 メーカー: Infineon および IAUCN04S7N015GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN04S7N037GATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.89 | $2.21 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Technology | Trench MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| パッケージ | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-THSOG-4-1 (SSO4G 5x6) surface mount |
| 実装タイプ | Surface Mount (IMS substrate attach compatible) | Surface Mount (IMS-compatible source-down) |
| Channel Type | N-Channel | N-Channel |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | [DATA_NEEDED: MSL level] | 1 (per JEDEC J-STD-020) |
| 動作温度範囲 | [DATA_NEEDED: junction/ambient temperature limits] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Product Family | — | OptiMOS 7 |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) | — | 165 A (Tc) |
| Power Dissipation (P_D) | — | 96 W (Tc) |
| R_DS(on) max | — | 1.53 mΩ at V_GS=10 V |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical] |
| 動作接合温度 | — | -55C to +175C |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |