IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
部品番号: IAUCN04S7N037GATMA1 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.38 | $138.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $1.02 | $1,020.00 |
| 3,000 | $0.89 | $2,670.00 |
IAUCN04S7N037GATMA1 概要
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to modulate current flow between source and drain terminals. The OptiMOS 7 family belongs to the trench MOSFET technology hierarchy, descending from discrete semiconductors > transistors > MOSFETs > power MOSFETs. Automotive-grade OptiMOS 7 devices target switched-mode power conversion, motor drive, and high-current load switching where low conduction loss, fast switching, and ruggedness are required.
Key features of the IAUCN04S7N037GATMA1 include an ultra-low RDS(on) of 3.65 mΩ typical at 10 V VGS, optimized switching figures of merit for high-frequency operation, and a 40 V drain-source voltage rating suitable for 12 V automotive systems. The SSO4G 5x6 mm² package offers an exposed drain pad for direct soldering to IMS substrates, enabling direct attach to metal substrates for superior thermal dissipation in high-current applications.
The device is built on Infineon's advanced trench technology, which minimizes cell pitch and reduces parasitic capacitances (Ciss, Coss, Crss) for fast switching transitions. Low gate charge (Qg) and low Qgd reduce driver losses, while the low RDS(on) * Qg figure of merit translates to higher system efficiency in synchronous buck, boost, and half-bridge topologies. AEC-Q101 qualification confirms its suitability for automotive environments.
Typical applications include 12 V automotive ECU power distribution, electric power steering (EPS), braking system controllers, DC-DC converters in 48V mild-hybrid systems, battery management system (BMS) protection circuits, and high-current motor drive half-bridges. The compact SSO4G footprint makes it especially attractive for space-constrained automotive ECUs.
When designing with this MOSFET, prioritize thermal management via IMS substrate attach, ensure VGS drive voltage reaches at least 10 V for full RDS(on) benefit, and verify SOA against your specific load profile. Use a gate driver with sufficient peak current capability to charge the gate quickly and minimize switching losses.
This page synthesizes distributor pricing, parametric comparison, drop-in alternatives, and practical design notes not aggregated in the manufacturer datasheet alone - providing engineering context that complements Infineon's product documentation.
ドロップイン代替品: IAUCN04S7N037GATMA1 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IAUCN04S7N037GATMA1 （同一形状・フットプリント） — 相違点: Package, Technology, Automotive Qualification, Operating Temperature Range, Mounting Type.
クイック比較ツール — 並列比較する代替部品を選択:
IAUCN04S7N027GATMA1
✅ ドロップイン✓ 在庫あり
$0.72 / 個
データシートを見る →IAUCN04S7N019GATMA1
✅ ドロップイン✓ 在庫あり
$0.82 / 個
データシートを見る →IAUCN04S7L042GATMA1
✅ ドロップイン✓ 在庫あり
$0.86 / 個
データシートを見る →IAUCN04S7L050HATMA1
✅ ドロップイン✓ 在庫あり
$0.83 / 個
データシートを見る →IAUCN04S7N015GATMA1
✅ ドロップイン✓ 在庫あり
$2.21 / 個
データシートを見る →IAUCN04S7N037GATMA1 最大定格＆電気的特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| Technology | Trench MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at Tj | 91 A |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | 57 W |
| パッケージ | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| 実装タイプ | Surface Mount (IMS substrate attach compatible) |
| Channel Type | N-Channel |
| Operating Mode | Enhancement |
| Automotive Qualification | AEC-Q101 |
| RoHS ステータス | Compliant |
IAUCN04S7N037GATMA1 ピン構成
| ピン 1 | Gate — MOSFET gate drive input |
| ピン 2 | Source — Source terminal (low-side return) |
| ピン 3 | Source — Source terminal (low-side return) |
| ピン 4 | Drain — Drain terminal via exposed pad (package bottom) |
安全動作領域
主な用途
IAUCN04S7N037GATMA1 の用途: 6 件s: 12V Automotive ECU Power Distribution, Electric Power Steering (EPS) Motor Drive, 48V Mild-Hybrid DC-DC Converter, Battery Management System (BMS) Protection, Braking System Controller (ESC/ABS), High-Current Motor Drive Half-Bridge.
12V Automotive ECU Power Distribution
The IAUCN04S7N037GATMA1 is purpose-built for 12 V automotive ECU power switching where 40 V VDS provides sufficient margin for 24 V jump-start transients and load-dump events per ISO 7637-2. Its 91 A continuous drain current and 3.65 mΩ RDS(on) at VGS = 10 V enable efficient high-side load switches for body control modules, lighting drivers, and accessory power rails. The SSO4G 5x6 mm² footprint with exposed drain pad attaches directly to IMS substrates, achieving thermal resistance low enough for sustained 30-50 A loads without external heatsinks. AEC-Q101 qualification ensures reliability under -40 °C to +150 °C automotive temperature profiles.
おすすめ
Electric Power Steering (EPS) Motor Drive
Electric power steering systems require MOSFETs that combine low RDS(on) for efficiency, AEC-Q101 reliability, and compact packaging for in-cabin mounting. The IAUCN04S7N037GATMA1 at 3.65 mΩ RDS(on) and 91 A ID handles the peak currents demanded during parking maneuvers, while its OptiMOS 7 trench technology minimizes switching losses at the 20-50 kHz PWM frequencies typical of EPS inverter stages. The SSO4G package's exposed pad enables direct bond to chassis-grounded heat spreaders, addressing the strict EMI and thermal constraints of column-assist EPS units where space and weight are at a premium.
おすすめ
48V Mild-Hybrid DC-DC Converter
In 48 V mild-hybrid powertrains, the IAUCN04S7N037GATMA1 serves as the synchronous rectifier or high-side switch in buck/boost converters interfacing 48 V to 12 V domains. Although VDS = 40 V requires a derating-aware topology for 48 V rails, the part excels in 12 V downstream conversion stages and in 24 V systems found in commercial vehicles. Its 57 W power dissipation rating and SSO4G IMS-attach footprint deliver the thermal headroom needed for continuous 30-60 A operation in DC-DC stages. Low Qg and Qgd reduce switching losses at the 100-200 kHz frequencies common in modern automotive SMPS designs.
おすすめ
Battery Management System (BMS) Protection
The IAUCN04S7N037GATMA1 functions as a low-loss disconnect/ protection element in 12 V and 24 V battery management systems. Its 91 A continuous rating covers nearly all passenger-vehicle cranking battery topologies, while 3.65 mΩ RDS(on) keeps conduction loss below 1 W at 20 A continuous discharge - critical for sleep-current-sensitive applications. AEC-Q101 qualification provides the reliability margin BMS designs demand for safety-critical overcurrent and reverse-polarity protection paths. The SSO4G 5x6 mm² package fits within the dense BMS PCB layouts common in start-stop and micro-hybrid vehicles.
おすすめ
Braking System Controller (ESC/ABS)
Electronic stability control and anti-lock braking systems demand MOSFETs with proven reliability under harsh thermal-cycling and vibration conditions. The IAUCN04S7N037GATMA1 meets these requirements through AEC-Q101 qualification and OptiMOS 7 trench ruggedness, handling solenoid and pump-motor drive currents in the 10-40 A range typical of ESC modulator valves. Its low RDS(on) reduces I²R losses during active braking events, where hundreds of millijoules per actuation accumulate quickly. The SSO4G IMS-attach footprint enables direct thermal coupling to the ESC's aluminum chassis, supporting long-term reliability in safety-critical brake-by-wire applications.
おすすめ
High-Current Motor Drive Half-Bridge
In automotive brushed and brushless DC motor inverters, the IAUCN04S7N037GATMA1 serves as either the high-side or low-side switch in a half-bridge configuration. Its 91 A rating covers most 12 V automotive auxiliary motors (fuel pumps, coolant pumps, HVAC blowers, windshield wiper drives) operating at 15-40 A continuous. The 3.65 mΩ RDS(on) paired with low Qg minimizes both conduction and switching losses, supporting the higher PWM frequencies that reduce motor acoustic noise. The SSO4G footprint allows compact half-bridge layouts with minimal parasitic inductance, critical for clean switching waveforms at 20-50 kHz PWM.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IAUCN04S7N037GATMA1 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IAUCN04S7N027GATMA1 | IAUCN04S7N019GATMA1 | IAUCN04S7L042GATMA1 | IAUCN04S7L050HATMA1 | IAUCN04S7N015GATMA1 |
|---|---|---|---|---|---|---|
| Package | SSO4G 5x6 mm² (PG-THSOG-4-1) | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same | SSO4G 5x6 mm² (PG-THSOG-4-1) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) typical at VGS=10V | 3.65 mΩ | ~2.7 mΩ (lower) | ~1.9 mΩ (lower) | ~4.2 mΩ (slightly higher) | ~5.0 mΩ (higher) | ~1.5 mΩ (lowest) |
| Automotive Grade | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
主な差別化要因
- Optimized RDS(on) for 30-60 A continuous load range （vs IAUCN04S7N027GATMA1)
- Lower RDS(on) than L-series variants （vs IAUCN04S7L042GATMA1)
- IMS substrate attach optimized （vs DPAK alternatives)
設計ノート
Estimated: At ID = 30 A continuous and RDS(on) = 3.65 mΩ, conduction loss is approximately 3.3 W. Using the SSO4G 5x6 mm² package on an IMS substrate with typical RthJA of 25-40 °C/W (substrate-dependent), the junction temperature rise is 80-130 °C above ambient. For ambient temperatures up to 85 °C, this keeps Tj below 150-175 °C - verify with substrate-specific thermal characterization for your PCB stack-up. The exposed drain pad MUST be soldered to the IMS dielectric layer for rated thermal performance.
Minimize parasitic source inductance by placing the gate driver return path directly adjacent to the source pin (pin 2/3). Keep the gate loop area under 5 mm² to suppress VGS ringing during fast switching transitions. For half-bridge configurations, use a top-side layout that places high-side and low-side sources on adjacent pads to minimize high-side ground bounce. Place a 100 nF ceramic bypass capacitor within 2 mm of VCC on the gate driver IC.
Ensure VGS drive voltage reaches at least 10 V to fully enhance the MOSFET and achieve the rated 3.65 mΩ RDS(on). Below 8 V, RDS(on) increases dramatically (perhaps 2x or more), causing excessive conduction loss and possible thermal runaway. Do not exceed VGS = ±20 V absolute maximum - many gate driver ICs include a 12 V or 15 V clamp for protection. Verify ISO 7637-2 transient immunity in the final ECU design.
コンプライアンス情報
AEC-Q101 automotive qualified per Infineon product page ('IAUC' prefix indicates automotive grade OptiMOS 7 family). RoHS and REACH compliant per distributor listings.
