IAUCN08S7L024ATMA1 vs IQEH50NE2LM7ZCGATMA1 比較
詳細な並列比較: IAUCN08S7L024ATMA1 メーカー: Infineon および IQEH50NE2LM7ZCGATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 生産中仕様比較
| パラメータ | IAUCN08S7L024ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.68 | $1.42 |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | OptiMOS 7 (Trench-Gate) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| パッケージ | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TTFN-9-3 |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C (Tj) | -55 degrees C to +175 degrees C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | MSL1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Qualification | — | Industrial grade per Infineon datasheet |