IAUCN08S7L024ATMA1 vs IQEH50NE2LM7ZCGATMA1 对比
详细并排对比 IAUCN08S7L024ATMA1 出自 Infineon 和 IQEH50NE2LM7ZCGATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ 量产中规格对比
| 参数 | IAUCN08S7L024ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.68 | $1.42 |
| Technology | OptiMOS™ 7 N-channel trench MOSFET | OptiMOS 7 (Trench-Gate) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) | 177 A (Tj) | — |
| Continuous Drain Current (Silicon-limited) | 150 A | — |
| On-Resistance RDS(on) max | 2.4 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 148 W (Tc) | — |
| 封装 | PG-TDSON-8-34 (SSO8 5x6 mm²) | PG-TTFN-9-3 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C (Tj) | -55 degrees C to +175 degrees C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | — |
| Avalanche Energy Rated | Yes (single-pulse) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS 状态 | Compliant | Compliant |
| MSL 等级 | MSL1 (per JEDEC J-STD-020) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Maximum Junction Temperature | — | +175 degrees C |
| Qualification | — | Industrial grade per Infineon datasheet |