IAUCN08S7L024ATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L024ATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L024ATMA1
IAUCN08S7L024ATMA1 - 80V 2.4mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L024ATMA1 β ActiveInfineon
IQEH50NE2LM7ZCGATMA1
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L024ATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $1.42 |
| Technology | OptiMOSβ’ 7 N-channel trench MOSFET | OptiMOS 7 (Trench-Gate) |
| Drain-Source Voltage (VDS) | 80 V | β |
| Continuous Drain Current (ID) | 177 A (Tj) | β |
| Continuous Drain Current (Silicon-limited) | 150 A | β |
| On-Resistance RDS(on) max | 2.4 mΞ© at VGS=10 V | β |
| Power Dissipation (PD) | 148 W (Tc) | β |
| Package | PG-TDSON-8-34 (SSO8 5x6 mmΒ²) | PG-TTFN-9-3 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (Tj) | -55 degrees C to +175 degrees C |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | β |
| Total Gate Charge Qg | [DATA_NEEDED: Qg typ] | β |
| Avalanche Energy Rated | Yes (single-pulse) | β |
| Automotive Qualification | AEC-Q101 qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL1 (per JEDEC J-STD-020) | β |
| Manufacturer | β | Infineon Technologies |
| Product Family | β | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | β | N-Channel |
| Drain-Source Voltage (Vds) Max | β | 25 V |
| Continuous Drain Current (Ta) | β | 54 A |
| Continuous Drain Current (Tc) | β | 422 A |
| Maximum On-Resistance (Rds(on)) | β | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | β | 1.7 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 150 W |
| Maximum Junction Temperature | β | +175 degrees C |
| Qualification | β | Industrial grade per Infineon datasheet |