IAUCN08S7L024ATMA1 vs IQEH50NE2LM7ZCGATMA1 Comparison

Detailed side-by-side comparison of IAUCN08S7L024ATMA1 by Infineon and IQEH50NE2LM7ZCGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN08S7L024ATMA1 IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L024ATMA1 - 80V 2.4mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN08S7L024ATMA1 ✓ Active

Specification Comparison

Parameter IAUCN08S7L024ATMA1 IQEH50NE2LM7ZCGATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Technology OptiMOS™ 7 N-channel trench MOSFET OptiMOS 7 (Trench-Gate)
Drain-Source Voltage (VDS) 80 V —
Continuous Drain Current (ID) 177 A (Tj) —
Continuous Drain Current (Silicon-limited) 150 A —
On-Resistance RDS(on) max 2.4 mΩ at VGS=10 V —
Power Dissipation (PD) 148 W (Tc) —
Package PG-TDSON-8-34 (SSO8 5x6 mm²) PG-TTFN-9-3
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +175C (Tj) -55 degrees C to +175 degrees C
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Total Gate Charge Qg [DATA_NEEDED: Qg typ] —
Avalanche Energy Rated Yes (single-pulse) —
Automotive Qualification AEC-Q101 qualified —
RoHS Status Compliant Compliant
MSL Level MSL1 (per JEDEC J-STD-020) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 7 Power-Transistor
Polarity / Channel Type — N-Channel
Drain-Source Voltage (Vds) Max — 25 V
Continuous Drain Current (Ta) — 54 A
Continuous Drain Current (Tc) — 422 A
Maximum On-Resistance (Rds(on)) — 0.5 mOhm
Gate Threshold Voltage (Vgs(th)) — 1.7 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 150 W
Maximum Junction Temperature — +175 degrees C
Qualification — Industrial grade per Infineon datasheet

Datasheets & Resources

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