IAUCN10S5L110TATMA1 vs IPB35N10S3L26ATMA2 比較
詳細な並列比較: IAUCN10S5L110TATMA1 メーカー: Infineon および IPB35N10S3L26ATMA2 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN10S5L110TATMA1 | IPB35N10S3L26ATMA2 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.08 | $0.48 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| Technology | N-Channel MOSFET, Trench, Logic Level | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tj | 61 A | — |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage rating] | — |
| Power Dissipation (PD) at Tc | 88 W | — |
| 動作接合温度 | -55 °C to +175 °C | — |
| Storage Temperature | [DATA_NEEDED: storage temperature] | — |
| パッケージ | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled | PG-TO263-3-2 (D2PAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL1 (260°C peak reflow) | — |
| Avalanche Rated | 100% Avalanche Tested | — |
| Automotive Qualification | AEC-Q101 Extended Qualification | — |
| RoHS ステータス | Compliant | Compliant |
| Product Family | — | OptiMOS Power-Transistor |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | — | 100 V |
| Continuous Drain Current (Id) at Tc | — | 35 A |
| パルスドレイン電流 | — | 180 A |
| Power Dissipation (Pd) at Tc | — | 71 W |
| RDS(on) (typical) | — | 26.3 mOhm |
| 動作温度範囲 | — | -55C to +175C |
| ピン数 | — | 3 |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical value] |
| Automotive Qualified | — | Yes (per Infineon product page classification) |