IAUZ20N08S5L300ATMA1 vs IAUC64N08S5L075ATMA1 比較
詳細な並列比較: IAUZ20N08S5L300ATMA1 メーカー: Infineon および IAUC64N08S5L075ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ 生産中仕様比較
| パラメータ | IAUZ20N08S5L300ATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.81 | $0.58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 | — |
| Polarity | N-Channel | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) | 20 A (Tc) | — |
| Power Dissipation (Pd) | 30 W (Tc) | — |
| On-State Resistance (Rds(on)) | 30 mΩ @ 10 A, 10 V | — |
| Gate Threshold Voltage (Vgs(th)) | ±20 V (max Vgs rating) | — |
| Input Capacitance (Ciss) | 599 pF @ 40 V | — |
| Total Gate Charge (Qg) | 10.5 nC @ 10 V | [DATA_NEEDED: total gate charge] |
| 動作接合温度 | -55°C to +175°C | -55 °C to +175 °C |
| パッケージ | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm | PG-TDSON-8-33 (5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (automotive) | — |
| Technology | Trench MOSFET (OptiMOS-5) | OptiMOS™ 5 |
| RoHS ステータス | Compliant | — |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| MSLレベル | — | MSL1 (per JEDEC J-STD-020) |
| ピン数 | — | 8 |