IPB072N15N3GATMA1 vs IPB200N25N3GATMA1 比較
詳細な並列比較: IPB072N15N3GATMA1 メーカー: Infineon および IPB200N25N3GATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB072N15N3GATMA1 | IPB200N25N3GATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $2.84 | $1.65 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (V_DS) | 150 V | 250 V |
| Continuous Drain Current (I_D, Tc=25C) | 100 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed I_DM] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W | — |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | — |
| R_DS(on) max at VGS=10V | [DATA_NEEDED: max R_DS(on) at VGS=10V] | — |
| Gate-Source Voltage (V_GS) max | +/-20 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | [DATA_NEEDED: V_GS(th) typical/max] |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at VGS=10V] | — |
| 動作温度範囲 | -55 C to +175 C | -55C to +175C |
| パッケージ | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) | PG-TO263-3 (D2PAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) | — |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) | — |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 |
| トランジスタタイプ | — | N-Channel MOSFET |
| Continuous Drain Current (I_D) at T_C | — | 64 A |
| Power Dissipation (P_D) at T_C | — | 300 W |
| R_DS(on) max at V_GS=10V | — | 20 mOhm |
| Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical] |
| ハロゲンフリー | — | Yes (per Infineon OptiMOS family datasheet) |
| MSLレベル | — | 1 (per JEDEC J-STD-020) |
| ピン数 | — | 3 (2+tab) |