IPB072N15N3GATMA1 vs IPB200N25N3GATMA1 对比
详细并排对比 IPB072N15N3GATMA1 出自 Infineon 和 IPB200N25N3GATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB072N15N3GATMA1 | IPB200N25N3GATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.84 | $1.65 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (V_DS) | 150 V | 250 V |
| Continuous Drain Current (I_D, Tc=25C) | 100 A | — |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed I_DM] | — |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W | — |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | — |
| R_DS(on) max at VGS=10V | [DATA_NEEDED: max R_DS(on) at VGS=10V] | — |
| Gate-Source Voltage (V_GS) max | +/-20 V | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | [DATA_NEEDED: V_GS(th) typical/max] |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at VGS=10V] | — |
| 工作温度范围 | -55 C to +175 C | -55C to +175C |
| 封装 | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) | PG-TO263-3 (D2PAK) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) | — |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) | — |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) | — |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 3 |
| 晶体管类型 | — | N-Channel MOSFET |
| Continuous Drain Current (I_D) at T_C | — | 64 A |
| Power Dissipation (P_D) at T_C | — | 300 W |
| R_DS(on) max at V_GS=10V | — | 20 mOhm |
| Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical] |
| 无卤 | — | Yes (per Infineon OptiMOS family datasheet) |
| MSL 等级 | — | 1 (per JEDEC J-STD-020) |
| 引脚数量 | — | 3 (2+tab) |