IPB072N15N3GATMA1 vs IPB200N25N3GATMA1 Comparison
Detailed side-by-side comparison of IPB072N15N3GATMA1 by Infineon and IPB200N25N3GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB072N15N3GATMA1 - 150V 100A N-Ch OptiMOS 3 MOSFET | Infineon
IPB072N15N3GATMA1 β ActiveSpecification Comparison
| Parameter | IPB072N15N3GATMA1 | IPB200N25N3GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $1.65 |
| FET Type | N-Channel | β |
| Technology | OptiMOS 3 (trench MOSFET) | OptiMOS 3 (Trench) |
| Drain-Source Voltage (V_DS) | 150 V | 250 V |
| Continuous Drain Current (I_D, Tc=25C) | 100 A | β |
| Continuous Drain Current (I_D, Tc=100C) | [DATA_NEEDED: I_D at Tc=100C] | β |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed I_DM] | β |
| Maximum Power Dissipation (P_D, Tc=25C) | 300 W | β |
| R_DS(on) typical at VGS=10V | 7.2 mOhm | β |
| R_DS(on) max at VGS=10V | [DATA_NEEDED: max R_DS(on) at VGS=10V] | β |
| Gate-Source Voltage (V_GS) max | +/-20 V | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | [DATA_NEEDED: V_GS(th) typical/max] |
| Total Gate Charge (Q_g) | [DATA_NEEDED: Q_g typical at VGS=10V] | β |
| Operating Temperature Range | -55 C to +175 C | -55C to +175C |
| Package | PG-TO263-3-2 (D2PAK-2, 3 pins + tab) | PG-TO263-3 (D2PAK) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Avalanche Energy Rated | Yes (single-pulse E_AS) | β |
| Intrinsic Body Diode | Yes (low Q_rr, sync-rectifier capable) | β |
| Manufacturer Ordering Code Suffix | GATMA1 (tape and reel, 1000 pcs) | β |
| Manufacturer | β | Infineon Technologies |
| Part Family | β | OptiMOS 3 |
| Transistor Type | β | N-Channel MOSFET |
| Continuous Drain Current (I_D) at T_C | β | 64 A |
| Power Dissipation (P_D) at T_C | β | 300 W |
| R_DS(on) max at V_GS=10V | β | 20 mOhm |
| Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g typical] |
| Halogen-Free | β | Yes (per Infineon OptiMOS family datasheet) |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Pin Count | β | 3 (2+tab) |