IPB35N10S3L26ATMA1 vs IPD70N10S3L12ATMA1 比較
詳細な並列比較: IPB35N10S3L26ATMA1 メーカー: Infineon および IPD70N10S3L12ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB35N10S3L26ATMA1 | IPD70N10S3L12ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.15 | $0.78 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-T | OptiMOS-T |
| Channel Type | N-Channel | — |
| Maximum Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC | 35 A | — |
| Power Dissipation (PD) at TC | 71 W | — |
| Package Type | PG-TO263-3 (D2PAK-2) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| ピン数 | 3 (Gate, Drain, Source) | 3 (Drain, Gate, Source + tab) |
| Channel Mode | Enhancement | — |
| RDS(on) (typical per Infineon product page) | 26.3 mΩ | — |
| Typical Gate Charge Qg @ Vgs | 80 nC | — |
| Maximum Drain-Source Resistance Rds | 1.7 mΩ (per RS Components listing) | — |
| Minimum Operating Temperature | -55 C | — |
| Maximum Power Dissipation Pd | 81 W (per RS Components listing) | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | Compliant (Green Product) |
| AEC-Q101 Qualification | [DATA_NEEDED: AEC-Q101 qualification status] | — |
| トランジスタタイプ | — | N-Channel MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc) | — | 70 A |
| Pulsed Drain Current (IDM) | — | 180 A |
| Power Dissipation (Ptot, Tc) | — | 125 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 11.5 mΩ |
| 動作温度範囲 | — | -55 °C to +175 °C (junction) |
| パッケージ | — | PG-TO252-3-11 (DPAK) |
| MSLレベル | — | MSL1 (per JEDEC J-STD-020, up to 260 °C peak reflow) |
| Automotive Qualification | — | AEC-Q101 qualified |
| Avalanche Rating | — | 100 % avalanche tested |
| Avalanche Energy (Single Pulse) | — | [DATA_NEEDED: EAS value] |