IPB35N10S3L26ATMA1 vs IPD70N10S3L12ATMA1 Comparison

Detailed side-by-side comparison of IPB35N10S3L26ATMA1 by Infineon and IPD70N10S3L12ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IPB35N10S3L26ATMA1 IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon

IPB35N10S3L26ATMA1 βœ“ Active
Infineon
IPD70N10S3L12ATMA1 IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 - 100V 70A OptiMOS-T MOSFET | Infineon

IPD70N10S3L12ATMA1 βœ“ Active

Specification Comparison

Parameter IPB35N10S3L26ATMA1 IPD70N10S3L12ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.15 $0.78
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS-T OptiMOS-T
Channel Type N-Channel β€”
Maximum Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID) at TC 35 A β€”
Power Dissipation (PD) at TC 71 W β€”
Package Type PG-TO263-3 (D2PAK-2) β€”
Mounting Type Surface Mount Surface Mount
Pin Count 3 (Gate, Drain, Source) 3 (Drain, Gate, Source + tab)
Channel Mode Enhancement β€”
RDS(on) (typical per Infineon product page) 26.3 mΞ© β€”
Typical Gate Charge Qg @ Vgs 80 nC β€”
Maximum Drain-Source Resistance Rds 1.7 mΞ© (per RS Components listing) β€”
Minimum Operating Temperature -55 C β€”
Maximum Power Dissipation Pd 81 W (per RS Components listing) β€”
RoHS Status [DATA_NEEDED: RoHS status] Compliant (Green Product)
AEC-Q101 Qualification [DATA_NEEDED: AEC-Q101 qualification status] β€”
Transistor Type β€” N-Channel MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) β€” 100 V
Continuous Drain Current (ID, Tc) β€” 70 A
Pulsed Drain Current (IDM) β€” 180 A
Power Dissipation (Ptot, Tc) β€” 125 W
On-State Resistance RDS(on) typ @ VGS=10V β€” 11.5 mΞ©
Operating Temperature Range β€” -55 Β°C to +175 Β°C (junction)
Package β€” PG-TO252-3-11 (DPAK)
MSL Level β€” MSL1 (per JEDEC J-STD-020, up to 260 Β°C peak reflow)
Automotive Qualification β€” AEC-Q101 qualified
Avalanche Rating β€” 100 % avalanche tested
Avalanche Energy (Single Pulse) β€” [DATA_NEEDED: EAS value]

Datasheets & Resources

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