IPB35N10S3L26ATMA2 vs IAUCN10S5L110TATMA1 比較
詳細な並列比較: IPB35N10S3L26ATMA2 メーカー: Infineon および IAUCN10S5L110TATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPB35N10S3L26ATMA2 | IAUCN10S5L110TATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.48 | $2.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor | — |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| パルスドレイン電流 | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| パッケージ | PG-TO263-3-2 (D2PAK) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +175C | — |
| ピン数 | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS ステータス | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Series | — | OptiMOS 5 |
| Technology | — | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| 動作接合温度 | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| MSLレベル | — | MSL1 (260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |