IPB35N10S3L26ATMA2 vs IAUCN10S5L110TATMA1 对比
详细并排对比 IPB35N10S3L26ATMA2 出自 Infineon 和 IAUCN10S5L110TATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPB35N10S3L26ATMA2 | IAUCN10S5L110TATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.48 | $2.08 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS Power-Transistor | — |
| 晶体管类型 | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 100 V | — |
| Continuous Drain Current (Id) at Tc | 35 A | — |
| 脉冲漏极电流 | 180 A | — |
| Power Dissipation (Pd) at Tc | 71 W | — |
| RDS(on) (typical) | 26.3 mOhm | — |
| 封装 | PG-TO263-3-2 (D2PAK) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +175C | — |
| 引脚数 | 3 | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical value] | — |
| RoHS 状态 | Compliant | Compliant |
| Automotive Qualified | Yes (per Infineon product page classification) | — |
| Series | — | OptiMOS 5 |
| Technology | — | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tj | — | 61 A |
| On-Resistance RDS(on) max at VGS=10V | — | 11.3 mΩ |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | — | 88 W |
| 工作结温 | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature] |
| MSL 等级 | — | MSL1 (260°C peak reflow) |
| Avalanche Rated | — | 100% Avalanche Tested |
| Automotive Qualification | — | AEC-Q101 Extended Qualification |