IPD046N08N5ATMA1 vs ISC016N08NM8ATMA1 比較
詳細な並列比較: IPD046N08N5ATMA1 メーカー: Infineon および ISC016N08NM8ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD046N08N5ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $1.02 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Series | OptiMOS™ 5 80V | OptiMOS 8 |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) Max | 80 V | — |
| Continuous Drain Current (ID) at Tc=25°C | 90 A | — |
| On-Resistance RDS(on) Max at VGS=10V | 4.6 mΩ | — |
| Gate-Source Voltage (VGS) Max | ±20 V | — |
| Power Dissipation (PD) at Tc=25°C | 125 W | — |
| 動作接合温度範囲 | -55 °C to +175 °C | — |
| パッケージ / ケース | PG-TO252-3 (DPAK), 3-pin (2 leads + tab) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | OptiMOS™ 5 trench MOSFET | Trench-gate OptiMOS 8 (silicon) |
| RoHS ステータス | ROHS3 Compliant | Compliant |
| MSLレベル | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020E classification for SuperSO8) |
| Configuration | Single N-channel, 3-pin (Gate / Drain tab / Source) | — |
| Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS max) | — | 80 V |
| Gate-Source Voltage (VGS max) | — | +/-20 V (typical rating) |
| Continuous Drain Current (ID) at Ta | — | 29 A |
| Continuous Drain Current (ID) at Tc | — | [DATA_NEEDED: pulsed/continuous current rating at Tc] |
| Pulsed Drain Current (IDM) at Tc | — | 268 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 263 W |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 1.6 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| 動作温度範囲 | — | -55 C to +150 C (junction) |
| パッケージ | — | SuperSO8 / PG-TDSON-8 (5.0 x 6.0 mm) |
| Lead-Free / Halogen-Free | — | Lead-free (per Infineon product page) |