IPD068N10N3GATMA1 vs IPB024N10N5ATMA1 比較
詳細な並列比較: IPD068N10N3GATMA1 メーカー: Infineon および IPB024N10N5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD068N10N3GATMA1 | IPB024N10N5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.65 | $1.86 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPD068N10N3GATMA1 | — |
| Technology | OptiMOS 3 (N-Channel, Enhancement Mode) | OptiMOS 5 N-Channel MOSFET (trench, shielded gate) |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Continuous Drain Current (ID) at Tc | 90 A | — |
| On-Resistance RDS(on) max | 6.8 mOhm | — |
| Power Dissipation (PD) at Tc | 150 W | — |
| Gate Threshold Voltage VGS(th) | 2.0 V to 4.0 V (typical) | — |
| パッケージ | PG-TO252-3 (DPAK, 2 leads + tab) | PG-TO263-7 (D2PAK-7) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作接合温度 | -55 C to +175 C | — |
| Channel Type | N-Channel | — |
| Configuration | Single | — |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 (unlimited floor life at <30C/85% RH) |
| Packing | Tape & Reel (T/R) | — |
| Qualification | Industrial (non-automotive) | — |
| Continuous Drain Current (ID, TC=25C) | — | 180 A |
| Power Dissipation (PD, TC=25C) | — | 250 W |
| On-Resistance RDS(on) max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) value] |
| Gate Charge Qg typ @ VGS=10V | — | [DATA_NEEDED: Qg total gate charge] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total gate charge] |
| Input Capacitance Ciss | — | [DATA_NEEDED: Ciss value] |
| Output Capacitance Coss | — | [DATA_NEEDED: Coss value] |
| Reverse Recovery Charge Qrr | — | [DATA_NEEDED: Qrr value] |
| 動作温度範囲 | — | -55C to +175C (junction) |
| Packaging | — | Tape & Reel (13-inch reel) |
| ハロゲンフリー | — | Yes (per Infineon product family policy) |