IPD50N04S408ATMA1 vs IPC50N04S55R8ATMA1 比較
詳細な並列比較: IPD50N04S408ATMA1 メーカー: Infineon および IPC50N04S55R8ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPD50N04S408ATMA1 | IPC50N04S55R8ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.69 | $0.61 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-T2 | — |
| Polarity | N-Channel | Enhancement Mode |
| Mode | Enhancement-mode | — |
| Drain-Source Voltage (V DS) | 40 V | — |
| Continuous Drain Current (I D, Tc) | 50 A | — |
| Power Dissipation (P D, Tc) | 46 W | — |
| パッケージ | PG-TO252-3-313 (DPAK) | PG-TDSON-8-33 (TDSON EP) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 °C to +175 °C | -55 °C to +175 °C |
| MSLレベル | MSL1 (260 °C peak reflow) | MSL1 (260 °C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Tested | 100 % Avalanche tested | — |
| Green Package (RoHS) | RoHS compliant | — |
| Gate Threshold Voltage (V GS(th)) | [DATA_NEEDED: V GS(th) typical] | — |
| On-State Resistance (R DS(on)) | [DATA_NEEDED: R DS(on) at V GS = 10 V] | — |
| Total Gate Charge (Q G) | [DATA_NEEDED: Q G typical] | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (trench MOSFET) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D) at Tc | — | 50 A |
| Power Dissipation (P_D) at Tc | — | 42 W |
| R_DS(on) Max (V_GS=10V) | — | 5.8 mΩ |
| Output Capacitance (C_oss) | — | 305 pF |
| Gate Threshold (V_GS(th)) | — | [DATA_NEEDED: V_GS(th)] |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS / Green | — | RoHS compliant, Green Product |