IPD50P04P4L11ATMA2 - P-Ch 40V 50A 10.6mΩ MOSFET | Infineon
部品番号: IPD50P04P4L11ATMA2 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $1.95 | $1.95 |
| 10 | $1.72 | $17.20 |
| 100 | $1.45 | $145.00 |
| 500 | $1.18 | $590.00 |
| 1,000 | $0.98 | $980.00 |
| 2,500 | $0.82 | $2,050.00 |
IPD50P04P4L11ATMA2 概要
What is a P-channel MOSFET? A P-channel MOSFET is a type of field-effect transistor that conducts when its gate-source voltage is driven below the threshold (i.e. negative relative to source). In the transistor taxonomy: MOSFET -> P-channel MOSFET -> enhancement-mode MOSFET -> power MOSFET -> discrete semiconductor. Because the gate is referenced to the source, P-channel devices simplify high-side switching in low-voltage systems by allowing direct logic-level NPN/CMOS drive without charge-pump circuitry required by N-channel equivalents.
Key features of the IPD50P04P4L11ATMA2 include: 10.6 mΩ R_DS(on) at VGS = 10 V for low conduction loss; a typical gate charge Qg of 45 nC for fast switching transitions; 58 W power dissipation on a DPAK pad with adequate copper; and 175 °C maximum junction temperature for harsh-environment reliability. The DPAK footprint is the industry-standard through-hole-replaceable surface-mount outline, easing both new designs and DPAK-to-TO-220 conversions.
Technically, the device uses Infineon's OptiMOS P-channel technology, a trench-gate process that minimizes cell pitch and R_DS(on) × Qg figure of merit. The -40 V VDS rating provides >30 % derating margin over a 12 V automotive battery rail and tolerates load-dump transients common in 24 V truck systems. Body-diode robustness and avalanche rating support inductive load switching.
Typical applications include automotive reverse-battery protection, electronic fuse (eFuse) blocks, motor driver high-side switches, USB Type-C VBUS load switches, and 12 V/24 V hot-swap circuits. AEC-Q101 qualification makes it directly usable under-the-hood and in body-electronics modules.
When designing with this part, ensure the gate is pulled to source potential during off-state (logic-high on a P-channel gate disables the device). The DPAK tab must be soldered to a copper pad of at least 1 square inch to keep junction temperature below 150 °C under continuous 30 W dissipation.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the Infineon datasheet alone.
ドロップイン代替品: IPD50P04P4L11ATMA2 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: IPD50P04P4L11ATMA2 （同一形状・フットプリント） — 相違点: Package, Technology, Drain-Source Voltage (VDS), Operating Junction Temperature, Operating Temperature Range.
クイック比較ツール — 並列比較する代替部品を選択:
IPD50P04P4L-11
✅ ドロップイン📋 参考代替品（カタログ未掲載）
IRFR5305TRPBF
✅ ドロップイン✓ 在庫あり
$0.32 / 個
データシートを見る →IRFR5305TRLPBF
✅ ドロップイン✓ 在庫あり
$0.38 / 個
データシートを見る →IRFR5410TRPBF
✅ ドロップイン✓ 在庫あり
$0.71 / 個
データシートを見る →IRFR5410TRRPBF
✅ ドロップイン✓ 在庫あり
$0.49 / 個
データシートを見る →IPD50P04P4L11ATMA2 最大定格＆電気的特性
| トランジスタタイプ | P-Channel MOSFET, enhancement mode |
| Drain-Source Voltage VDS | -40 V |
| Continuous Drain Current ID (TC = 25 °C) | -50 A |
| On-State Resistance RDS(on) (VGS = -10 V) | 10.6 mΩ typical |
| Gate-Source Voltage VGS (max) | ±20 V |
| Gate Threshold Voltage VGS(th) | -1.0 V to -2.5 V typical |
| Typical Gate Charge Qg | 45 nC |
| Power Dissipation PD (TC = 25 °C) | 58 W |
| 動作接合温度 | -55 °C to +175 °C |
| パッケージ | PG-TO252-3-313 (DPAK), surface mount |
| ピン数 | 3 (Drain / Tab / Source / Gate) |
| 実装タイプ | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Compliance | Compliant |
IPD50P04P4L11ATMA2 ピン構成
| ピン 1 | Gate — Gate control input; pull to source to disable |
| ピン 2 | Drain — Drain connection (also tied to metal tab); high-current path |
| ピン 3 | Source — Source connection; reference for gate drive and Kelvin return |
安全動作領域 (DC)
主な用途
IPD50P04P4L11ATMA2 の用途: 7 件s: Automotive Reverse-Battery Protection, Electronic Fuse (eFuse) Blocks, High-Side Load Switch for 12V/24V Rails, USB Type-C VBUS Load Switch, Hot-Swap / Battery Insertion Protection, Industrial Motor Driver High-Side Switch, Power ORing / Redundant Supply Selector.
Automotive Reverse-Battery Protection
The IPD50P04P4L11ATMA2 is purpose-built for 12 V/24 V automotive reverse-battery protection (RBP). With a -40 V VDS rating, the MOSFET can be placed in-line on the supply rail: when battery polarity is correct, a low-side NPN or PNP driver pulls the gate near source potential to enhance the channel, allowing full current flow with only 10.6 mΩ conduction loss. During reverse polarity, the gate is held high (near the now-positive drain), the MOSFET stays off, and the downstream ECU is protected. The 50 A continuous rating covers the full cold-crank inrush of body-control modules, while AEC-Q101 and 175 °C max junction qualify it for under-hood deployment. Compared to a Schottky diode solution, RDS(on) × I² losses are 4-5× lower, eliminating heatsinking concerns in compact body-electronics ECUs.
おすすめ
Electronic Fuse (eFuse) Blocks
In programmable eFuse designs for hot-swap and load protection, the IPD50P04P4L11ATMA2 acts as the main pass element between supply and load. Its 10.6 mΩ RDS(on) keeps steady-state I²R loss below 0.5 W at 7 A continuous, allowing small PCB area without a separate heatsink. The 45 nC typical gate charge enables fast current-limit response (<10 µs) when driving the gate with a dedicated hot-swap controller. AEC-Q101 and 175 °C junction allow eFuse deployment adjacent to engine control units where ambient temperature regularly exceeds 125 °C. Designers typically add a TVS across drain-source for inductive load transients and a sense resistor in source for current feedback.
おすすめ
High-Side Load Switch for 12V/24V Rails
The IPD50P04P4L11ATMA2 simplifies 12 V/24 V high-side load switching by eliminating the charge pump required by N-channel equivalents. A logic-level GPIO can drive the gate directly through a 10 kΩ pull-up to the source and a 100 Ω series resistor for inrush control, achieving sub-millisecond turn-on/off transitions. The 50 A continuous current supports driving resistive heaters, lighting clusters, and DC motors directly. The 175 °C junction rating and AEC-Q101 qualification permit mounting adjacent to engine accessories where PCB temperature may reach 105 °C ambient. Body-diode robustness allows inductive loads without external freewheeling diodes in many cases.
おすすめ
USB Type-C VBUS Load Switch
USB Type-C VBUS load switches in automotive head units and infotainment systems require P-channel MOSFETs capable of 5 V/3 A (15 W) to 20 V/5 A (100 W) USB-PD negotiation. The IPD50P04P4L11ATMA2 in DPAK handles up to 50 A steady-state with margin, while its 10.6 mΩ RDS(on) keeps voltage drop below 50 mV at 5 A. P-channel polarity allows the VBUS controller IC to drive the gate directly with a logic signal, simplifying the BOM. AEC-Q101 and 175 °C max junction make it suitable for head-unit PCB environments reaching 95 °C ambient. The 45 nC Qg enables fast VBUS fault disconnect (<5 µs) required by USB-PD 3.1 specifications.
おすすめ
Hot-Swap / Battery Insertion Protection
The IPD50P04P4L11ATMA2 is ideal for hot-swap controllers managing 12 V/24 V battery-backed systems in telecom, UPS, and industrial backup applications. When a battery is hot-plugged, the MOSFET limits inrush current via gate slew-rate control, while its 10.6 mΩ RDS(on) keeps steady-state conduction loss negligible at typical 5-10 A load. The -40 V VDS rating exceeds the highest voltage seen in 24 V telecom plants (29 V float). The 175 °C junction supports mounting in sealed enclosures where convection cooling is minimal. AEC-Q101 qualification provides extra reliability margin even in non-automotive deployments.
おすすめ
Industrial Motor Driver High-Side Switch
In industrial 24 V brushed DC motor driver H-bridges, the IPD50P04P4L11ATMA2 forms the high-side element of each half-bridge. Its 50 A continuous current rating covers sub-100 W motors directly, while the 10.6 mΩ RDS(on) keeps dissipation manageable at full torque. The 45 nC gate charge enables PWM frequencies up to 25 kHz with modest gate driver losses, supporting high-resolution torque control. AEC-Q101 and 175 °C junction permit deployment in industrial automation cabinets where ambient temperatures reach 85 °C. The P-channel polarity eliminates the bootstrap supply needed for N-channel high-side switches, simplifying the gate driver circuit.
おすすめ
Power ORing / Redundant Supply Selector
Redundant 12 V/24 V supply ORing circuits in server and telecom applications use two P-channel MOSFETs back-to-back to select the higher-voltage source while blocking reverse current from the lower-voltage source. The IPD50P04P4L11ATMA2's 10.6 mΩ RDS(on) keeps steady-state losses below 1 W at 10 A per rail, while its -40 V VDS supports 24 V telecom battery plants. The 50 A current rating covers peak transient loads in storage systems. AEC-Q101 qualification provides extra reliability margin in mission-critical infrastructure. The 45 nC Qg keeps switching transients during source transfer below 5 µs, avoiding downstream reset events.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: IPD50P04P4L11ATMA2 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | IPD50P04P4L-11 | IRFR5305TRPBF | IRFR5305TRLPBF | IRFR5410TRPBF | IRFR5410TRRPBF |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3-313 (DPAK) | PG-TO252-3-313 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage VDS | -40 V | -40 V | -55 V | -55 V | -100 V | -100 V |
| Continuous Drain Current ID (TC=25°C) | -50 A | -50 A | -31 A | -31 A | -13 A | -13 A |
| RDS(on) at VGS = 10 V | 10.6 mΩ | 10.6 mΩ | ~65 mΩ | ~65 mΩ | ~85 mΩ | ~85 mΩ |
| Max Junction Temperature | 175 °C | 175 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Automotive Qualification (AEC-Q101) | Yes | Yes | No | No | No | No |
| Unit Price (qty 1000, as of 2026-09-13) | $0.98 | ~$0.95 | ~$0.80 | ~$0.78 | ~$0.70 | ~$0.72 |
主な差別化要因
- Lowest RDS(on) in DPAK P-channel at -40 V rating （vs IRFR5305TRPBF)
- AEC-Q101 automotive qualification （vs IRFR5410TRPBF)
- 175 °C maximum junction temperature （vs IRFR5305TRPBF)
設計ノート
Estimated: At ID = 30 A continuous, conduction loss is P = I² × RDS(on) = 30² × 0.0106 = 9.5 W. With DPAK thermal resistance of approximately 50 °C/W on a 1 square-inch copper pad, junction temperature rise is 9.5 × 50 = 475 °C above ambient — which would exceed the 175 °C limit. At 30 A continuous, a 4 square-inch copper pad (RθJA ≈ 25 °C/W) brings junction rise to 240 °C, still excessive. Practical continuous current must be limited to roughly 12-15 A without forced airflow or a clip-on heatsink. For 30 A loads, use a larger package (D2PAK) or parallel two DPAK devices.
The DPAK tab is electrically connected to the drain (Pin 2). Solder the tab directly to a copper pour of at least 1 square inch (645 mm²) to keep thermal resistance low; 4 square inches is preferred for sustained high-current operation. Use thermal vias under the tab (0.3 mm drill, 1.0 mm pitch, plated shut or capped per IPC-4552) to conduct heat to inner copper layers. Route the gate trace away from the drain/source switching node to minimize dv/dt coupling, and add a 10 kΩ gate-source pull-down resistor to ensure the MOSFET stays off during controller power-up sequencing.
Do not exceed the maximum gate-source voltage of ±20 V (typically derated to ±16 V for reliability margin). Use a Zener clamp (e.g., 15 V) gate-source if the gate driver can overshoot during turn-off transients. Ensure the source kelvin connection is not shared with high-current source traces, otherwise RDS(on) derating will occur. For reverse-battery protection, place the MOSFET in the supply path with the body diode oriented to conduct during normal polarity — never rely on VGS(th) alone to block reverse voltage, as the body diode clamps at -1.5 V in reverse, which can damage downstream circuitry.
Keep the high-current drain and source traces short and wide to minimize parasitic inductance. Estimate: a 10 mm trace at 1 oz copper has approximately 10 nH inductance per mm width — at 30 A switching, this can produce voltage spikes of V = L × di/dt = 10 nH × 30 A / 100 ns = 3 V. Place a TVS diode (e.g., SMAJ33A) directly across drain-source to clamp these spikes. Separate the gate drive return (source kelvin) from the high-current source trace with a star-ground connection at the MOSFET source pin.
The 45 nC typical gate charge requires a gate driver capable of sourcing/sinking at least 200 mA peak for sub-100 ns rise/fall times. A weak gate driver (e.g., microcontroller GPIO) can take several microseconds to transition, causing the MOSFET to operate in the linear region and dissipate excessive power. Add a dedicated gate driver IC (e.g., TC4420) if the switching frequency exceeds 1 kHz, and keep the gate trace below 25 mm to minimize parasitic gate inductance.
コンプライアンス情報
AEC-Q101 automotive-qualified per Infineon datasheet. RoHS and REACH compliant. Halogen-free per IPC-4101B. Conflict-mineral compliant per Section 1502 of the Dodd-Frank Act.
