IPG20N04S408ATMA1 vs IPG20N06S2L65AATMA1 比較
詳細な並列比較: IPG20N04S408ATMA1 メーカー: Infineon および IPG20N06S2L65AATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPG20N04S408ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.78 | $0.78 |
| FET Type | Dual N-Channel | Dual N-Channel (Half Bridge / Independent) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS Trench MOSFET |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| 動作接合温度 | -55 degC to +175 degC | — |
| パッケージ | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL1 (260 degC peak reflow) | MSL1 (peak reflow 260 C) |
| AEC-Q101 Qualified | Yes | — |
| RoHS ステータス | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| 動作温度 | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |