IPG20N04S408ATMA1 vs IPG20N06S2L65AATMA1 对比
详细并排对比 IPG20N04S408ATMA1 出自 Infineon 和 IPG20N06S2L65AATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | IPG20N04S408ATMA1 | IPG20N06S2L65AATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.78 | $0.78 |
| FET Type | Dual N-Channel | Dual N-Channel (Half Bridge / Independent) |
| Technology | OptiMOS (trench MOSFET) | OptiMOS Trench MOSFET |
| Drain-Source Voltage (V_DSS) | 40 V | — |
| Continuous Drain Current (I_D, per channel) | 20 A at 25 degC case | — |
| R_DS(on) max @ V_GS=10V | 7.6 mOhm | — |
| Maximum Power Dissipation (P_D) | 65 W | — |
| 工作结温 | -55 degC to +175 degC | — |
| 封装 | PG-TDSON-8-4 (SuperSO8 dual) | PG-TDSON-8-10 (TDSON-8 EP, wettable flank) |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL1 (260 degC peak reflow) | MSL1 (peak reflow 260 C) |
| AEC-Q101 Qualified | Yes | — |
| RoHS 状态 | Compliant (Green Product) | Compliant (Green Product) |
| Avalanche Rated | 100 percent tested | — |
| Channel Count | 2 (independent) | — |
| Operating Mode | Enhancement mode, Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Power Dissipation (PD) | — | 43 W |
| Gate Threshold (VGS(th)) | — | Logic-Level |
| 工作温度 | — | -55 C to +175 C |
| AEC-Q101 Qualification | — | Yes |
| Avalanche Tested | — | 100% (per datasheet) |
| AOI Compatible | — | Yes (wettable flank) |