IPG20N10S436AATMA1 vs BSC030N08NS5ATMA1 比較
詳細な並列比較: IPG20N10S436AATMA1 メーカー: Infineon および BSC030N08NS5ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPG20N10S436AATMA1 | BSC030N08NS5ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.68 | $0.55 |
| Configuration | Dual N-Channel (2 Elements with Built-in Diode) | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) | 20 A (per channel) | — |
| Total Power Dissipation (PD) | 43 W | — |
| Operating Mode | Enhancement Mode | — |
| パッケージ | PG-TDSON-8-10 (Wettable Flank) | PG-TDSON-8-7 (SuperSO8 5x6 mm) |
| 実装タイプ | Surface Mount | Surface Mount |
| Operating Temperature (TJ max) | +175 C | — |
| JESD-609 Code | e3 | — |
| MSLレベル | MSL1 (260 C peak reflow) | 1 (per JEDEC J-STD-020) |
| Automotive Qualification | AEC-Q101 | — |
| Avalanche Tested | 100% | — |
| AOI Compatible | Yes (Wettable Flank) | — |
| RoHS ステータス | Compliant (Green Product) | Compliant |
| Channel Type | N-Channel Normal Level | — |
| Manufacturer | — | Infineon Technologies |
| Product Type | — | N-Channel Power MOSFET |
| Technology | — | OptiMOS 5 |
| Drain-Source Voltage (VDS) max | — | 80 V |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Pulsed Drain Current (ID,pulse) | — | 161 A |
| Gate-Source Voltage (VGS) max | — | +/-20 V |
| RDS(on) max at VGS=10 V | — | 3.0 mOhm |
| RDS(on) max at VGS=7 V | — | [DATA_NEEDED: RDS(on) at VGS=7V] |
| Power Dissipation (Ta=25C, 1.5mm FR4) | — | 2.5 W |
| Power Dissipation (TC=25C) | — | 139 W |
| Operating Temperature Range (TJ) | — | -55C to +150C |
| ハロゲンフリー | — | Yes |
| Lead-Free | — | Yes |
| Gate Drive Logic | — | Standard 10V, compatible with 12V drive |
| Optimized Application | — | Synchronous Rectification |