IPN60R360P7SATMA1 vs IPD80R600P7ATMA1 比較
詳細な並列比較: IPN60R360P7SATMA1 メーカー: Infineon および IPD80R600P7ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPN60R360P7SATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.37 | $0.92 |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS P7 | — |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| On-Resistance RDS(on) max | 360 mΩ | — |
| Continuous Drain Current (ID) at TC=25°C | 9 A | — |
| Continuous Drain Current (ID) at TA=25°C | [DATA_NEEDED: ID at TA=25°C with standard PCB] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 22 A |
| Power Dissipation (PD) at TC=25°C | 7 W | — |
| Gate-Source Voltage (VGS) | ±20 V (max) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3 V (typical) |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | — |
| 動作温度範囲 | -55°C to +150°C (TJ) | -55 C to +150 C |
| パッケージ | PG-SOT223 (Surface Mount) | PG-TO252-3 (DPAK) |
| 実装タイプ | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | — |
| ハロゲンフリー | Yes (per Infineon datasheet) | — |
| RoHS Compliance | Compliant | — |
| ピン数 | 3 functional + tab (PG-SOT223) | — |
| Body Diode | Integrated, fast-recovery | — |
| Continuous Drain Current (ID, Tc) | — | 8 A |
| On-Resistance (RDS(on), max) | — | 600 mΩ at VGS=10V |
| Maximum Power Dissipation (Ptot) | — | 60 W (Tc) |
| Maximum Gate-Source Voltage (VGS) | — | ±30 V |
| Avalanche Energy, Single Pulse (EAS) | — | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | — | 0.17 mJ |
| Polarity | — | N-Channel |
| MSLレベル | — | 1 (per JEDEC J-STD-020) |