IPN60R360P7SATMA1 vs IPD80R600P7ATMA1 Comparison
Detailed side-by-side comparison of IPN60R360P7SATMA1 by Infineon and IPD80R600P7ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPN60R360P7SATMA1
IPN60R360P7SATMA1 - 600V 360mΞ© CoolMOS P7 MOSFET | Infineon
IPN60R360P7SATMA1 β Active
Specification Comparison
| Parameter | IPN60R360P7SATMA1 | IPD80R600P7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.37 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | CoolMOS P7 | β |
| Technology | Superjunction (SJ) N-Channel MOSFET | CoolMOS P7 super-junction |
| Drain-Source Voltage (VDS) | 600 V | 800 V |
| On-Resistance RDS(on) max | 360 mΞ© | β |
| Continuous Drain Current (ID) at TC=25Β°C | 9 A | β |
| Continuous Drain Current (ID) at TA=25Β°C | [DATA_NEEDED: ID at TA=25Β°C with standard PCB] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 22 A |
| Power Dissipation (PD) at TC=25Β°C | 7 W | β |
| Gate-Source Voltage (VGS) | Β±20 V (max) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 3 V (typical) |
| Total Gate Charge (QG) | [DATA_NEEDED: QG typical at VGS=10V] | β |
| Operating Temperature Range | -55Β°C to +150Β°C (TJ) | -55 C to +150 C |
| Package | PG-SOT223 (Surface Mount) | PG-TO252-3 (DPAK) |
| Mounting Type | Surface Mount | Surface Mount |
| ESD Protection | Yes (integrated cell) | β |
| Halogen-Free | Yes (per Infineon datasheet) | β |
| RoHS Compliance | Compliant | β |
| Pin Count | 3 functional + tab (PG-SOT223) | β |
| Body Diode | Integrated, fast-recovery | β |
| Continuous Drain Current (ID, Tc) | β | 8 A |
| On-Resistance (RDS(on), max) | β | 600 mΞ© at VGS=10V |
| Maximum Power Dissipation (Ptot) | β | 60 W (Tc) |
| Maximum Gate-Source Voltage (VGS) | β | Β±30 V |
| Avalanche Energy, Single Pulse (EAS) | β | 20 mJ |
| Avalanche Energy, Repetitive (EAR) | β | 0.17 mJ |
| Polarity | β | N-Channel |
| MSL Level | β | 1 (per JEDEC J-STD-020) |