IPP075N15N3GXKSA1 vs IPP200N15N3GXKSA1 比較
詳細な並列比較: IPP075N15N3GXKSA1 メーカー: Infineon および IPP200N15N3GXKSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPP075N15N3GXKSA1 | IPP200N15N3GXKSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.92 | $1.79 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 3 | — |
| Technology | N-Channel MOSFET (OptiMOS 3) | OptiMOS 3 |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Power Dissipation (PD, Tc=25C) | 300 W | — |
| On-State Resistance (RDS(on) max, VGS=10V) | 7.5 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: gate-source voltage absolute max] | — |
| パッケージ | PG-TO220-3 (TO-220 through-hole) | TO-220-3 (PG-TO220-3), through-hole |
| 実装タイプ | Through Hole | Through Hole |
| 動作温度範囲 | [DATA_NEEDED: junction operating temperature range] | — |
| Gate Threshold Voltage (VGS(th) typ) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Lead-Free / RoHS | RoHS Compliant | — |
| Ordering Code Suffix | GXKSA1 (Tube pack, RoHS compliant) | — |
| Drain-Source Voltage (VDS max) | — | 150 V |
| Continuous Drain Current (ID max, Tc) | — | 50 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Static Drain-Source On-Resistance (RDS(on) max) | — | 20 mOhm at VGS = 10 V |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Gate Charge (Qg typ) | — | [DATA_NEEDED: Qg typical] |
| Total Power Dissipation (Ptot max, Tc=25C) | — | 150 W |
| Channel Type | — | N-Channel |
| 動作接合温度範囲 | — | -55 C to +175 C |
| RoHS ステータス | — | Compliant |
| Lead-Free | — | Yes |
| MSLレベル | — | Not Applicable (through-hole) |