IPTC039N15NM5ATMA1 vs IRF1310NSTRLPBF 比較
詳細な並列比較: IPTC039N15NM5ATMA1 メーカー: Infineon および IRF1310NSTRLPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Infineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ 生産中
仕様比較
| パラメータ | IPTC039N15NM5ATMA1 | IRF1310NSTRLPBF |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $4.05 | $0.84 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| トランジスタタイプ | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V | 100 V |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| Continuous Drain Current (ID) at Tc | 190 A | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 319 W | — |
| On-Resistance RDS(on) typical | 3.9 mOhm | — |
| Gate Charge Qg typical | 74 nC | — |
| Maximum Gate-Source Voltage (VGS) | 20 V | — |
| 動作温度 | -55 C to +175 C (junction) | — |
| パッケージ | PG-HDSOP-16-2 (top-side cooled) | D2PAK (TO-263AB) |
| 実装タイプ | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench | IR MOSFET (HEXFET) |
| Cooling | Top-side cooled (case above PCB) | — |
| RoHS ステータス | Compliant | — |
| Continuous Drain Current (ID) at TC=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 36 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 73.3 nC |
| Power Dissipation (PD) at TC=25C | — | 160 W |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| 動作温度範囲 | — | -55C to +175C |
| Built-in Diode | — | Yes (intrinsic body diode) |
| Lead-Free / RoHS | — | Yes (PBF suffix) |
| Configuration | — | Single with built-in diode |