IPTC039N15NM5ATMA1 vs IRF1310NSTRLPBF Comparison

Detailed side-by-side comparison of IPTC039N15NM5ATMA1 by Infineon and IRF1310NSTRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IRF1310NSTRLPBF IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF - 100V 42A N-Channel MOSFET | Infineon D2PAK

IRF1310NSTRLPBF βœ“ Active

Specification Comparison

Parameter IPTC039N15NM5ATMA1 IRF1310NSTRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.05 $0.84
Manufacturer Infineon Technologies β€”
Series OptiMOS 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at Ta 21 A β€”
Continuous Drain Current (ID) at Tc 190 A β€”
Power Dissipation (PD) at Ta 3.8 W β€”
Power Dissipation (PD) at Tc 319 W β€”
On-Resistance RDS(on) typical 3.9 mOhm β€”
Gate Charge Qg typical 74 nC β€”
Maximum Gate-Source Voltage (VGS) 20 V β€”
Operating Temperature -55 C to +175 C (junction) β€”
Package PG-HDSOP-16-2 (top-side cooled) D2PAK (TO-263AB)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS 5 trench IR MOSFET (HEXFET)
Cooling Top-side cooled (case above PCB) β€”
RoHS Status Compliant β€”
Continuous Drain Current (ID) at TC=25C β€” 42 A
Pulsed Drain Current (IDM) β€” [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V β€” 36 mOhm
Gate-Source Voltage (VGS) max β€” [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) β€” [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) β€” 73.3 nC
Power Dissipation (PD) at TC=25C β€” 160 W
Power Dissipation (PD) at TA=25C β€” 3.8 W
Operating Temperature Range β€” -55C to +175C
Built-in Diode β€” Yes (intrinsic body diode)
Lead-Free / RoHS β€” Yes (PBF suffix)
Configuration β€” Single with built-in diode

Datasheets & Resources

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