IPTC054N15NM5ATMA1 vs IQE220N15NM5CGSCATMA1 比較
詳細な並列比較: IPTC054N15NM5ATMA1 メーカー: Infineon および IQE220N15NM5CGSCATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IPTC054N15NM5ATMA1 | IQE220N15NM5CGSCATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $1.52 | $2.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 (IPT family) | OptiMOS 5 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 150 V | 150 V |
| Continuous Drain Current (ID) at TA=25°C | 17.5 A | — |
| Continuous Drain Current (ID) at TC=25°C | 143 A | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Power Dissipation (PD) at TC=25°C | 250 W | — |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 5.4 mΩ | — |
| Gate-Source Voltage (VGS) max | 20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | 4.6 V |
| Total Gate Charge (Qg) typical | 58 nC | — |
| Forward Body Diode Voltage (VSD) | 0.83 V | — |
| 動作接合温度 | -55 °C to +175 °C | — |
| パッケージ | PG-HDSOP-16-2 (16-pin top-cooled) | PG-WHTFN-9 (Source-Down) |
| 実装タイプ | Surface Mount (top-side cooled) | Surface Mount |
| RoHS ステータス | Compliant | Compliant |
| Lead-Free | Yes | — |
| MSLレベル | [DATA_NEEDED: MSL rating] | — |
| Continuous Drain Current at Ta (ID) | — | 7 A |
| Continuous Drain Current at Tc (ID) | — | 44 A |
| Power Dissipation at Ta (PD) | — | 2.5 W |
| Power Dissipation at Tc (PD) | — | 100 W |
| On-Resistance (RDS(on)) | — | 22 milliohm (max) |
| Technology | — | OptiMOS 5, Source-Down |
| 動作温度範囲 | — | -55C to +150C (junction) |